The effects of rapid recrystallization and ion implanted carbon on the solid phase epitaxial regrowth of Si{sub 1-x}Ge{sub x} alloy layers on silicon

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Transmission electron microscopy has been combined with time-resolved reflectivity and ion channeling to study the effects of regrowth temperature and carbon introduction by ion implantation on the solid phase epitaxial regrowth (SPER) of strained 2000{Angstrom}, Si{sub 0.88}Ge{sub 0.12}/Si alloy films grown by molecular-beam epitaxy (MBE). Relative to the undoped layers, carbon incorporation in the MBE grown SiGe layers prior to regrowth at moderate temperatures (500--700C) has three main effects on SPER: these include a reduction in SPER rate, a delay in the onset of strain-relieving defect formation, and a sharpening of the amorphouse-crystalline (a/c) interface, i.e., promotion of a two-dimensional ... continued below

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6 p.

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Antonell, M.J.; Jones, K.S. & Haynes, T.E. July 1, 1995.

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Transmission electron microscopy has been combined with time-resolved reflectivity and ion channeling to study the effects of regrowth temperature and carbon introduction by ion implantation on the solid phase epitaxial regrowth (SPER) of strained 2000{Angstrom}, Si{sub 0.88}Ge{sub 0.12}/Si alloy films grown by molecular-beam epitaxy (MBE). Relative to the undoped layers, carbon incorporation in the MBE grown SiGe layers prior to regrowth at moderate temperatures (500--700C) has three main effects on SPER: these include a reduction in SPER rate, a delay in the onset of strain-relieving defect formation, and a sharpening of the amorphouse-crystalline (a/c) interface, i.e., promotion of a two-dimensional (planar) growth front. Recrystallization of amorphized SiGe layers at higher temperatures (1100C) substantially modifies the defect structure in samples both with and without carbon. At these elevated temperatures treading dislocations extend completely to the Si/SiGe interface. Stacking faults are eliminated in the high temperature regrowth, and the treading dislocation density is slightly higher with carbon implantation.

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6 p.

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OSTI as DE95014581

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  • Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 17-21 Apr 1995

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  • Other: DE95014581
  • Report No.: CONF-950412--24
  • Grant Number: AC05-84OR21400
  • Office of Scientific & Technical Information Report Number: 101147
  • Archival Resource Key: ark:/67531/metadc620002

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  • July 1, 1995

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  • June 16, 2015, 7:43 a.m.

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  • Aug. 8, 2016, 8:45 p.m.

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Antonell, M.J.; Jones, K.S. & Haynes, T.E. The effects of rapid recrystallization and ion implanted carbon on the solid phase epitaxial regrowth of Si{sub 1-x}Ge{sub x} alloy layers on silicon, article, July 1, 1995; Tennessee. (digital.library.unt.edu/ark:/67531/metadc620002/: accessed December 12, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.