Beat-wave generation of plasmons in semiconductor plasmas

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Description

It is shown that in semiconductor plasmas, it is possible to generate large amplitude plasma waves by the beating of two laser beams with frequency difference close to the plasma frequency. For narrow gap seimconductors (for example n-type InSb), the system can simulate the physics underlying beat wave generation in relativistic gaseous plasmas.

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10 p.

Creation Information

Berezhiani, V.I. & Mahajan, S.M. August 1, 1995.

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  • Berezhiani, V.I. International Centre for Theoretical Physics, Trieste (Italy)
  • Mahajan, S.M. International Centre for Theoretical Physics, Trieste (Italy)

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Description

It is shown that in semiconductor plasmas, it is possible to generate large amplitude plasma waves by the beating of two laser beams with frequency difference close to the plasma frequency. For narrow gap seimconductors (for example n-type InSb), the system can simulate the physics underlying beat wave generation in relativistic gaseous plasmas.

Physical Description

10 p.

Notes

INIS; OSTI as DE96000246

Source

  • Other Information: PBD: Aug 1995

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  • Other: DE96000246
  • Report No.: DOE/ET/53088--716
  • Grant Number: FG05-80ET53088
  • DOI: 10.2172/108115 | External Link
  • Office of Scientific & Technical Information Report Number: 108115
  • Archival Resource Key: ark:/67531/metadc619609

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Office of Scientific & Technical Information Technical Reports

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Creation Date

  • August 1, 1995

Added to The UNT Digital Library

  • June 16, 2015, 7:43 a.m.

Description Last Updated

  • Aug. 10, 2016, 2:09 p.m.

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Berezhiani, V.I. & Mahajan, S.M. Beat-wave generation of plasmons in semiconductor plasmas, report, August 1, 1995; Austin, Texas. (digital.library.unt.edu/ark:/67531/metadc619609/: accessed June 21, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.