InGaAsN/AlGaAs Pnp Heterojunction Bipolar Transistor

PDF Version Also Available for Download.

Description

The authors have demonstrated a functional Pnp heterojunction bipolar transistor (HBT) using InGaAsN. The metalorganic vapor phase epitaxy (MOCVD) grown Al{sub 0.3}Ga{sub 0.7}As/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} HBT takes advantage of the narrower bandgap energy (E{sub g} = 1.25eV) of In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01}, which is lattice matched to GaAs. Compared with the Al{sub 0.3}Ga{sub 0.7}As/GaAs material system, the Al{sub 0.3}Ga{sub 0.7}As/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} material system has a larger conduction band offset, while the valence band offset remains comparable. This characteristic band alignment is very suitable for Pnp HBT applications. The device's peak current gain is 23 ... continued below

Physical Description

12 p.

Creation Information

BACA,ALBERT G.; CHANG,PING-CHIH; HOU,H.Q.; LAROCHE,J.R.; LI,N.Y.; REN,F. et al. November 3, 1999.

Context

This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 33 times . More information about this article can be viewed below.

Who

People and organizations associated with either the creation of this article or its content.

Sponsor

Publisher

  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

Contact Us

What

Descriptive information to help identify this article. Follow the links below to find similar items on the Digital Library.

Description

The authors have demonstrated a functional Pnp heterojunction bipolar transistor (HBT) using InGaAsN. The metalorganic vapor phase epitaxy (MOCVD) grown Al{sub 0.3}Ga{sub 0.7}As/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} HBT takes advantage of the narrower bandgap energy (E{sub g} = 1.25eV) of In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01}, which is lattice matched to GaAs. Compared with the Al{sub 0.3}Ga{sub 0.7}As/GaAs material system, the Al{sub 0.3}Ga{sub 0.7}As/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} material system has a larger conduction band offset, while the valence band offset remains comparable. This characteristic band alignment is very suitable for Pnp HBT applications. The device's peak current gain is 23 and it has a turn on voltage of 0.77V, which is 0.25V lower than in a comparable Pnp Al{sub 0.3}Ga{sub 0.7}As/GaAs HBT.

Physical Description

12 p.

Notes

OSTI as DE00014381

Medium: P; Size: 12 pages

Source

  • Journal Name: Applied Physics Letters; Other Information: Submitted to Applied Physics Letters

Language

Item Type

Identifier

Unique identifying numbers for this article in the Digital Library or other systems.

  • Report No.: SAND99-2841J
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 14381
  • Archival Resource Key: ark:/67531/metadc619549

Collections

This article is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

What responsibilities do I have when using this article?

When

Dates and time periods associated with this article.

Creation Date

  • November 3, 1999

Added to The UNT Digital Library

  • June 16, 2015, 7:43 a.m.

Description Last Updated

  • April 6, 2017, 8:21 p.m.

Usage Statistics

When was this article last used?

Yesterday: 0
Past 30 days: 0
Total Uses: 33

Interact With This Article

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

Citations, Rights, Re-Use

BACA,ALBERT G.; CHANG,PING-CHIH; HOU,H.Q.; LAROCHE,J.R.; LI,N.Y.; REN,F. et al. InGaAsN/AlGaAs Pnp Heterojunction Bipolar Transistor, article, November 3, 1999; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc619549/: accessed October 18, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.