Cavity nucleation and evolution in He-implanted Si and GaAs

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The criteria for forming stable cavities by He{sup +} implantation and annealing are examined for Si and GaAs. In Si, implanting at room temperature requires a minimum of 1.6 at. % He to form a continuous layer of cavities after annealing at 700{degrees}C. The cavities are located at dislocations and planar defects. Implanting peak He concentrations just above this threshold produces narrow layers of cavities at the projected range. In GaAs, room-temperature implantation followed by annealing results in exfoliation of the surface layer. Cavities were formed instead by implanting Ar followed by overlapping He, both at 400{degrees}C, with additional annealing ... continued below

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9 p.

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Follstaedt, D.M.; Myers, S.M.; Petersen, G.A. & Barbour, J.C. December 1, 1995.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

The criteria for forming stable cavities by He{sup +} implantation and annealing are examined for Si and GaAs. In Si, implanting at room temperature requires a minimum of 1.6 at. % He to form a continuous layer of cavities after annealing at 700{degrees}C. The cavities are located at dislocations and planar defects. Implanting peak He concentrations just above this threshold produces narrow layers of cavities at the projected range. In GaAs, room-temperature implantation followed by annealing results in exfoliation of the surface layer. Cavities were formed instead by implanting Ar followed by overlapping He, both at 400{degrees}C, with additional annealing at 400{degrees}C to outgas the He. This method forms 1.5--3.5 nm cavities that are often on [111] planar defects.

Physical Description

9 p.

Notes

OSTI as DE96003073

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  • Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 27 Nov - 1 Dec 1995

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  • Other: DE96003073
  • Report No.: SAND--95-1383C
  • Report No.: CONF-951155--9
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 164459
  • Archival Resource Key: ark:/67531/metadc619420

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  • December 1, 1995

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  • June 16, 2015, 7:43 a.m.

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  • April 14, 2016, 3:20 p.m.

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Follstaedt, D.M.; Myers, S.M.; Petersen, G.A. & Barbour, J.C. Cavity nucleation and evolution in He-implanted Si and GaAs, article, December 1, 1995; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc619420/: accessed October 18, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.