The Effect of Ramp Rate on the C49 to C54 Titanium Disilicide Phase Transformation from Ti and Ti(Ta)

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The C49 to C54 TiSi{sub 2} transformation temperature is shown to be reduced by increasing the ramp rate during rapid thermal processing and this effect is more pronounced for thinner initial Ti and Ti(Ta) films. Experiments were performed on blanket wafers and on wafers that had patterned polycrystalline Si lines with Si{sub 3}N{sub 4} sidewall spacers. Changing the ramp rate caused no change in the transformation temperature for 60 nm blanket Ti films. For blanket Ti films of 25 or 40 nm, however, increasing the ramp rate from 7 to 180 C/s decreased the transformation temperature by 15 C. Studies ... continued below

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14 p.

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BAILEY, GLENN A.; HU, YAO ZHI; SMITH, PAUL M. & TAY, SING PIN September 22, 1999.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 45 times . More information about this article can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

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The C49 to C54 TiSi{sub 2} transformation temperature is shown to be reduced by increasing the ramp rate during rapid thermal processing and this effect is more pronounced for thinner initial Ti and Ti(Ta) films. Experiments were performed on blanket wafers and on wafers that had patterned polycrystalline Si lines with Si{sub 3}N{sub 4} sidewall spacers. Changing the ramp rate caused no change in the transformation temperature for 60 nm blanket Ti films. For blanket Ti films of 25 or 40 nm, however, increasing the ramp rate from 7 to 180 C/s decreased the transformation temperature by 15 C. Studies of patterned lines indicate that sheet resistance of narrow lines is reduced by increased ramp rates for both Ti and Ti(Ta) films, especially as the linewidths decrease below 0.4 {micro}m. This improvement is particularly pronounced for the thinnest Ti(Ta) films, which exhibited almost no linewidth effect after being annealed with a ramp rate of 75 C/s.

Physical Description

14 p.

Notes

OSTI as DE00012684

Medium: P; Size: 14 pages

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  • Journal Name: Journal of Vacuum Science and Technolog, B; Other Information: Submitted to Journal of Vacuum Science and Technology, B

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  • Report No.: SAND99-2419J
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 12684
  • Archival Resource Key: ark:/67531/metadc619370

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • September 22, 1999

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  • June 16, 2015, 7:43 a.m.

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  • April 7, 2017, 2:07 p.m.

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BAILEY, GLENN A.; HU, YAO ZHI; SMITH, PAUL M. & TAY, SING PIN. The Effect of Ramp Rate on the C49 to C54 Titanium Disilicide Phase Transformation from Ti and Ti(Ta), article, September 22, 1999; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc619370/: accessed December 12, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.