Electron induced surface chemistry at the Cs/sapphire interface

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Electron induced etching of sapphire in the presence of Cs has been studied using a variety of surface analytical techniques. We find that this process occurs on both the (0001) and (1102) orientations of sapphire. Monolayer amounts of Al and sub-oxides of Al are thermally desorbed from the surface at temperatures as low as 1000 K when the surface is irradiated with electrons in the presence of Cs. Etching is highly dependent on Cs coverage with the (0001) and (1102) surfaces requiring 2.0 {times} 10{sup 14} and 3.4 {times} 10{sup 14} atoms/cm{sup 2} to support etching, respectively. Adsorption profiles demonstrate … continued below

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6 p.

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Zavadil, K.R. & Ing, J.L. November 1, 1995.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by the UNT Libraries Government Documents Department to the UNT Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 28 times. More information about this article can be viewed below.

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  • Zavadil, K.R. Sandia National Labs., Albuquerque, NM (United States)
  • Ing, J.L. AEA Technology, Albuquerque, NM (United States)

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Electron induced etching of sapphire in the presence of Cs has been studied using a variety of surface analytical techniques. We find that this process occurs on both the (0001) and (1102) orientations of sapphire. Monolayer amounts of Al and sub-oxides of Al are thermally desorbed from the surface at temperatures as low as 1000 K when the surface is irradiated with electrons in the presence of Cs. Etching is highly dependent on Cs coverage with the (0001) and (1102) surfaces requiring 2.0 {times} 10{sup 14} and 3.4 {times} 10{sup 14} atoms/cm{sup 2} to support etching, respectively. Adsorption profiles demonstrate that these coverages correspond to initial saturation of the surface with Cs. Electron damage of the surface in the absence of Cs also produces desorption of Al and sub-oxides of Al indicating a possible mechanism for etching. The impact of etching on the surface is to increase the adsorption capacity on the (0001) surface while decreasing both initial adsorption probability and capacity on the (1102) surface.

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6 p.

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OSTI as DE96001738

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  • STAIF 96: space technology and applications international forum, Albuquerque, NM (United States), 7-11 Jan 1996

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  • Other: DE96001738
  • Report No.: SAND--95-2312C
  • Report No.: CONF-960109--3
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 125176
  • Archival Resource Key: ark:/67531/metadc619047

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Office of Scientific & Technical Information Technical Reports

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  • November 1, 1995

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  • June 16, 2015, 7:43 a.m.

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  • April 13, 2016, 1:42 p.m.

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Zavadil, K.R. & Ing, J.L. Electron induced surface chemistry at the Cs/sapphire interface, article, November 1, 1995; Albuquerque, New Mexico. (https://digital.library.unt.edu/ark:/67531/metadc619047/: accessed April 25, 2024), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.

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