Mechanisms and modeling of single-event upset

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Description

The basic mechanisms of single-event upset are reviewed, including charge collection in silicon junctions and transistors, and properties of single-event upset in CMOS static random access memory (SRAM) cells. The mechanisms are illustrated through the use of three-dimensional device and circuit simulations. Technology trends and implications for commercial devices are discussed.

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9 Pages

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Dodd, Paul E. October 12, 1998.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 63 times , with 10 in the last month . More information about this article can be viewed below.

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Description

The basic mechanisms of single-event upset are reviewed, including charge collection in silicon junctions and transistors, and properties of single-event upset in CMOS static random access memory (SRAM) cells. The mechanisms are illustrated through the use of three-dimensional device and circuit simulations. Technology trends and implications for commercial devices are discussed.

Physical Description

9 Pages

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  • 3rd International Workshop on Radiation Effects on Semiconductor Devices for Space Application, Takasaki, Japan, 10/12/1998 - 10/13/1998

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  • Other: DE00001264
  • Report No.: SAND--98-2076C
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 1264
  • Archival Resource Key: ark:/67531/metadc618731

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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  • October 12, 1998

Added to The UNT Digital Library

  • June 16, 2015, 7:43 a.m.

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Dodd, Paul E. Mechanisms and modeling of single-event upset, article, October 12, 1998; United States. (digital.library.unt.edu/ark:/67531/metadc618731/: accessed November 20, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.