The formation of Al{sub 2}O{sub 3}/V{sub 2}O{sub 3} multilayer structures by high-dose ion implantation Metadata

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  • Main Title The formation of Al{sub 2}O{sub 3}/V{sub 2}O{sub 3} multilayer structures by high-dose ion implantation


  • Author: Gea, L.A.
    Creator Type: Personal
  • Author: Boatner, L.A.
    Creator Type: Personal
  • Author: Budai, J.D.
    Creator Type: Personal
    Creator Info: Oak Ridge National Lab., TN (United States). Solid State Div.
  • Author: Rankin, J.
    Creator Type: Personal
    Creator Info: Brown Univ., Providence, RI (United States)


  • Sponsor: United States. Department of Energy.
    Contributor Type: Organization
    Contributor Info: USDOE, Washington, DC (United States)


  • Name: Oak Ridge National Laboratory
    Place of Publication: Tennessee
    Additional Info: Oak Ridge National Lab., TN (United States)


  • Creation: 1995-04-01


  • English


  • Content Description: High-resolution TEM, RBS-channeling and x-ray-diffraction techniques have been used to characterize multilayered structures formed by the high-dose co-implantation of vanadium and oxygen into single crystals of {alpha}-Al{sub 2}O{sub 3}. Thin, two-dimensional multilayered structures have been formed by implanting c-axis and a-axis-oriented single crystals of Al{sub 2}O{sub 3} at room temperature with vanadium (10{sup 17} ions/cm{sup 2} at 300 keV) and oxygen (2 x 10{sup 17} ions/cm{sup 2}, 120 keV) followed by a rapid anneal at 1,000 C. Cross-sectional TEM studies showed that this process produced a buried layer of V{sub 2}O{sub 3} located about 120 nm below the Al{sub 2}O{sub 3} surface. X-ray-diffraction investigations revealed that this layer is epitaxially oriented in three dimensions with respect to the host Al{sub 2}O{sub 3} lattice. The orientational relationship was subsequently confirmed by RBS/channeling techniques. V{sub 2}O{sub 3} exhibits a first-order phase transition at about 155 K that is accompanied by striking changes in its electrical and optical properties, and this phase transition was observed through in-situ TEM cooling studies of cross-sectional samples.
  • Physical Description: 6 p.


  • Keyword: Layers
  • Keyword: Vanadium Oxides
  • Keyword: Crystal-Phase Transformations
  • Keyword: Ion Implantation
  • Keyword: Oxygen Ions
  • STI Subject Categories: 36 Materials Science
  • Keyword: Rutherford Scattering
  • Keyword: Lattice Parameters
  • Keyword: Composite Materials
  • Keyword: Microstructure
  • Keyword: Aluminium Oxides
  • Keyword: Experimental Data
  • Keyword: Fabrication
  • Keyword: Precipitation
  • Keyword: Vanadium Ions
  • Keyword: Transmission Electron Microscopy


  • Conference: Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 17-21 Apr 1995


  • Name: Office of Scientific & Technical Information Technical Reports
    Code: OSTI


  • Name: UNT Libraries Government Documents Department
    Code: UNTGD

Resource Type

  • Report


  • Text


  • Other: DE95017438
  • Report No.: CONF-950412--48
  • Grant Number: AC05-84OR21400
  • DOI: 10.2172/102253
  • Office of Scientific & Technical Information Report Number: 102253
  • Archival Resource Key: ark:/67531/metadc618580


  • Display Note: INIS; OSTI as DE95017438