The formation of Al{sub 2}O{sub 3}/V{sub 2}O{sub 3} multilayer structures by high-dose ion implantation

PDF Version Also Available for Download.

Description

High-resolution TEM, RBS-channeling and x-ray-diffraction techniques have been used to characterize multilayered structures formed by the high-dose co-implantation of vanadium and oxygen into single crystals of {alpha}-Al{sub 2}O{sub 3}. Thin, two-dimensional multilayered structures have been formed by implanting c-axis and a-axis-oriented single crystals of Al{sub 2}O{sub 3} at room temperature with vanadium (10{sup 17} ions/cm{sup 2} at 300 keV) and oxygen (2 x 10{sup 17} ions/cm{sup 2}, 120 keV) followed by a rapid anneal at 1,000 C. Cross-sectional TEM studies showed that this process produced a buried layer of V{sub 2}O{sub 3} located about 120 nm below the Al{sub 2}O{sub ... continued below

Physical Description

6 p.

Creation Information

Gea, L.A.; Boatner, L.A.; Budai, J.D. & Rankin, J. April 1, 1995.

Context

This report is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this report can be viewed below.

Who

People and organizations associated with either the creation of this report or its content.

Authors

Sponsor

Publisher

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

Contact Us

What

Descriptive information to help identify this report. Follow the links below to find similar items on the Digital Library.

Description

High-resolution TEM, RBS-channeling and x-ray-diffraction techniques have been used to characterize multilayered structures formed by the high-dose co-implantation of vanadium and oxygen into single crystals of {alpha}-Al{sub 2}O{sub 3}. Thin, two-dimensional multilayered structures have been formed by implanting c-axis and a-axis-oriented single crystals of Al{sub 2}O{sub 3} at room temperature with vanadium (10{sup 17} ions/cm{sup 2} at 300 keV) and oxygen (2 x 10{sup 17} ions/cm{sup 2}, 120 keV) followed by a rapid anneal at 1,000 C. Cross-sectional TEM studies showed that this process produced a buried layer of V{sub 2}O{sub 3} located about 120 nm below the Al{sub 2}O{sub 3} surface. X-ray-diffraction investigations revealed that this layer is epitaxially oriented in three dimensions with respect to the host Al{sub 2}O{sub 3} lattice. The orientational relationship was subsequently confirmed by RBS/channeling techniques. V{sub 2}O{sub 3} exhibits a first-order phase transition at about 155 K that is accompanied by striking changes in its electrical and optical properties, and this phase transition was observed through in-situ TEM cooling studies of cross-sectional samples.

Physical Description

6 p.

Notes

INIS; OSTI as DE95017438

Source

  • Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 17-21 Apr 1995

Language

Item Type

Identifier

Unique identifying numbers for this report in the Digital Library or other systems.

  • Other: DE95017438
  • Report No.: CONF-950412--48
  • Grant Number: AC05-84OR21400
  • DOI: 10.2172/102253 | External Link
  • Office of Scientific & Technical Information Report Number: 102253
  • Archival Resource Key: ark:/67531/metadc618580

Collections

This report is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

What responsibilities do I have when using this report?

When

Dates and time periods associated with this report.

Creation Date

  • April 1, 1995

Added to The UNT Digital Library

  • June 16, 2015, 7:43 a.m.

Description Last Updated

  • Jan. 22, 2016, 11:05 a.m.

Usage Statistics

When was this report last used?

Yesterday: 0
Past 30 days: 1
Total Uses: 3

Interact With This Report

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

Citations, Rights, Re-Use

Gea, L.A.; Boatner, L.A.; Budai, J.D. & Rankin, J. The formation of Al{sub 2}O{sub 3}/V{sub 2}O{sub 3} multilayer structures by high-dose ion implantation, report, April 1, 1995; Tennessee. (digital.library.unt.edu/ark:/67531/metadc618580/: accessed November 22, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.