Material and processing issues for the monolithic integration of microelectronics with surface-micromachined polysilicon sensors and actuators

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The monolithic integration of micromechanical devices with their controlling electronics offers potential increases in performance as well as decreases in cost for these devices. Analog Devices has demonstrated the commercial viability of this integration by interleaving the micromechanical fabrication steps of an accelerometer with the microelectronic fabrication steps of its controlling electronics. Sandia`s Microelectronics Development Laboratory has integrated the micromechanical and microelectronic processing sequences in a segregated fashion. In this CMOS-first, micromechanics-last approach, conventional aluminum metallization is replaced by tungsten metallization to allow CMOS to withstand subsequent high-temperature processing during the micromechanical fabrication. This approach is a further development of ... continued below

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Medium: ED; Size: 10 p.

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Smith, J.H.; Montague, S. & Sniegowski, J.J. August 1, 1995.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 39 times . More information about this article can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

The monolithic integration of micromechanical devices with their controlling electronics offers potential increases in performance as well as decreases in cost for these devices. Analog Devices has demonstrated the commercial viability of this integration by interleaving the micromechanical fabrication steps of an accelerometer with the microelectronic fabrication steps of its controlling electronics. Sandia`s Microelectronics Development Laboratory has integrated the micromechanical and microelectronic processing sequences in a segregated fashion. In this CMOS-first, micromechanics-last approach, conventional aluminum metallization is replaced by tungsten metallization to allow CMOS to withstand subsequent high-temperature processing during the micromechanical fabrication. This approach is a further development of an approach originally developed at UC Berkeley. Specifically, the issues of yield, repeatability, and uniformity of the tungsten/CMOS approach are addressed. Also, material issues related to the development of high-temperature diffusion barriers, adhesion layers, and low-stress films are discussed. Processing and material issues associated with alternative approaches to this integration such as micromechanics- first, CMOS-last or the interleaved process are also discussed.

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Medium: ED; Size: 10 p.

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  • Micromachining and microfabrication process technology conference, Austin, TX (United States), 23-24 Oct 1995

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  • Other: DE95016722
  • Report No.: SAND--95-0616C
  • Report No.: CONF-9510205--2
  • Office of Scientific & Technical Information Report Number: 100023
  • Archival Resource Key: ark:/67531/metadc613729

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  • August 1, 1995

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  • June 11, 2015, 9:57 p.m.

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  • April 13, 2016, 2:47 p.m.

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Smith, J.H.; Montague, S. & Sniegowski, J.J. Material and processing issues for the monolithic integration of microelectronics with surface-micromachined polysilicon sensors and actuators, article, August 1, 1995; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc613729/: accessed October 23, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.