Shubnikov-de Haas Effect Under Uniaxial Stress: A New Method for Determining Deformation Potentials and Band Structure Information in Semiconductors

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The problem with which this investigation is concerned is that of demonstrating the applicability of a particular theory and technique to two materials of different band structure, InSb and HgSe, and in doing so, determining the deformation potentials of these materials. The theory used in this investigation predicts an inversion-asymmetry splitting and an anisotropy of the Fermi surface under uniaxial stress. No previous studies have ever verified the existence of an anisotropy of the Fermi surface of semiconductors under stress. In this work evidence will be given which demonstrates this anisotropy. Although the inversion-asymmetry splitting parameter has been determined for … continued below

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ix, 159 leaves: ill.

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Hathcox, Kyle Lee December 1972.

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The problem with which this investigation is concerned is that of demonstrating the applicability of a particular theory and technique to two materials of different band structure, InSb and HgSe, and in doing so, determining the deformation potentials of these materials. The theory used in this investigation predicts an inversion-asymmetry splitting and an anisotropy of the Fermi surface under uniaxial stress. No previous studies have ever verified the existence of an anisotropy of the Fermi surface of semiconductors under stress. In this work evidence will be given which demonstrates this anisotropy. Although the inversion-asymmetry splitting parameter has been determined for some materials, no value has ever been reported for InSb. The methods presented in this paper allow a value of the splitting parameter to be determined for InSb.

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ix, 159 leaves: ill.

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  • December 1972

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Thumbnail image of item number 1 in: 'Shubnikov-de Haas Effect Under Uniaxial Stress: A New Method for Determining Deformation Potentials and Band Structure Information in Semiconductors'.
Thumbnail image of item number 2 in: 'Shubnikov-de Haas Effect Under Uniaxial Stress: A New Method for Determining Deformation Potentials and Band Structure Information in Semiconductors'.
Thumbnail image of item number 3 in: 'Shubnikov-de Haas Effect Under Uniaxial Stress: A New Method for Determining Deformation Potentials and Band Structure Information in Semiconductors'.
Thumbnail image of item number 4 in: 'Shubnikov-de Haas Effect Under Uniaxial Stress: A New Method for Determining Deformation Potentials and Band Structure Information in Semiconductors'.

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Hathcox, Kyle Lee. Shubnikov-de Haas Effect Under Uniaxial Stress: A New Method for Determining Deformation Potentials and Band Structure Information in Semiconductors, dissertation, December 1972; Denton, Texas. (https://digital.library.unt.edu/ark:/67531/metadc504123/: accessed April 24, 2024), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; .

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