Study of Gate Electrode Materials on High K Dielectrics

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This problem in lieu of thesis report presents a study on gate electrode materials on high K dielectrics, including poly-SiGe and Ru. The stability of poly-SiGe in direct contact with Hf silicon-oxynitride (HfSiON) is studied by rapid thermal annealing (RTA), Rutherford backscattering spectrometry (RBS), X-ray photoelectron spectroscopy (XPS) and high resolution transmission electron microscopy (HRTEM). By performing a series of RTA treatments we found that as RTA thermal budgets reach 1050 C for 30s, the poly-SiGe layer begins to intermix with the HfSiON film, as observed by TEM. The maximum annealing condition for the Hf0.14Si0.23O0.46N0.17 film to remain stable in ... continued below

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Yao, Chun August 2003.

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  • Yao, Chun

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This problem in lieu of thesis report presents a study on gate electrode materials on high K dielectrics, including poly-SiGe and Ru. The stability of poly-SiGe in direct contact with Hf silicon-oxynitride (HfSiON) is studied by rapid thermal annealing (RTA), Rutherford backscattering spectrometry (RBS), X-ray photoelectron spectroscopy (XPS) and high resolution transmission electron microscopy (HRTEM). By performing a series of RTA treatments we found that as RTA thermal budgets reach 1050 C for 30s, the poly-SiGe layer begins to intermix with the HfSiON film, as observed by TEM. The maximum annealing condition for the Hf0.14Si0.23O0.46N0.17 film to remain stable in contact with poly-SiGe is 1050 C for 20s in high purity N2(99.9%) ambient. We also found that after 1000 C annealing for 60s in a nitrogen ambient, the poly-SiGe crystal phase structure was changed from a columnar structure to a large grain structure. For a metal gate, Ru was studied to determine N2annealing effects on sheet resistance of Ru sample electrodes and electrical characterization of Ru/HfSiOx/Si stack. Results show that a pure Ru metal gate is not a good choice for high k materials since it is hard to etch off, and different annealing conditions can cause large changes in the electrical behavior.

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UNT Student Graduate Works

This collection houses graduate student works other than theses and dissertations. All materials have been previously accepted by a professional organization or approved by a faculty mentor. The collection includes, but is not limited to problems in lieu of thesis, supplemental files associated with theses and dissertations, posters, recitals, presentations, articles, reviews, book chapters, and artwork. Some items in this collection are restricted to use by the UNT community.

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  • August 2003

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  • Feb. 15, 2008, 2:53 p.m.

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  • March 24, 2016, 4:50 p.m.

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Yao, Chun. Study of Gate Electrode Materials on High K Dielectrics, thesis, August 2003; Denton, Texas. (digital.library.unt.edu/ark:/67531/metadc4273/: accessed December 16, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; .