Linear and Nonlinear Optical Techniques to Characterize Narrow Gap Semicondutors: (Hg /Cd)Te and InSb

PDF Version Also Available for Download.

Description

Several methods have been developed and used to characterize the narrow gap semiconductors Hg^_xCdxTe (HgCdTe) (0.20<x<0.32) and InSb both in the presence of CO2 laser radiation and in the dark. The results have allowed the determination of certain band parameters including the fundamental energy bandgap Eg which is directly related to x, the mole fraction of Cd. In the dark, characterization of several different samples of HgCdTe and InSb were carried out by analyzing the temperature dependence of the Hall coefficient and the magnetic field positions of the magnetophonon extrema from which their x-values were determined. The quality of the ... continued below

Physical Description

ix, 422 leaves : ill.

Creation Information

McClure, Stephen Warren May 1986.

Context

This dissertation is part of the collection entitled: UNT Theses and Dissertations and was provided by UNT Libraries to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 16 times . More information about this dissertation can be viewed below.

Who

People and organizations associated with either the creation of this dissertation or its content.

Chair

Committee Members

Publisher

Rights Holder

For guidance see Citations, Rights, Re-Use.

  • McClure, Stephen Warren

Provided By

UNT Libraries

With locations on the Denton campus of the University of North Texas and one in Dallas, UNT Libraries serves the school and the community by providing access to physical and online collections; The Portal to Texas History and UNT Digital Libraries; academic research, and much, much more.

Contact Us

What

Descriptive information to help identify this dissertation. Follow the links below to find similar items on the Digital Library.

Degree Information

Description

Several methods have been developed and used to characterize the narrow gap semiconductors Hg^_xCdxTe (HgCdTe) (0.20<x<0.32) and InSb both in the presence of CO2 laser radiation and in the dark. The results have allowed the determination of certain band parameters including the fundamental energy bandgap Eg which is directly related to x, the mole fraction of Cd. In the dark, characterization of several different samples of HgCdTe and InSb were carried out by analyzing the temperature dependence of the Hall coefficient and the magnetic field positions of the magnetophonon extrema from which their x-values were determined. The quality of the magnetophonon spectra is also shown to be related to the inhomogeneity Ax of the HgCdTe samples.
One-photon magneto-absorption (OPMA) spectra have been obtained for x ~ 0.2 samples of p-HgCdTe thin films and n-HgCdTe bulk samples. Analysis of the OPMA transition energies allows the x-value to be determined to within « ±0.001. A method is also discussed which can be used to estimate the sample inhomogeneity Ax. Nonlinear optical properties of semiconductors are not only scientifically interesting to study, but are also proving to be technologically important as various nonlinear optical devices are being developed. One of the most valuable nonlinear optical characterization method uses twophoton absorption (TPA). Two techniques using TPA processes were developed and used to measure the cut-off wavelength of several different samples of HgCdTe (x ~ 0.3) from which x-values were determined to within «± 0.0005. Intensity and temperature dependent measurements on impurity and TPA processes have also been carried out and the results are compared with rate equations describing the photo-excited carrier dynamics. These results have yielded important information about the optical and material properties of HgCdTe such as the detection of impurity and trapping levels, TPA coefficients, carrier lifetimes, and recombination mechanisms. TPA and impurity absorption studies were also carried out on n— and p—InSb in order to obtain information about impurity levels, carrier lifetimes, and recombination mechanisms.

Physical Description

ix, 422 leaves : ill.

Language

Identifier

Unique identifying numbers for this dissertation in the Digital Library or other systems.

Collections

This dissertation is part of the following collection of related materials.

UNT Theses and Dissertations

Theses and dissertations represent a wealth of scholarly and artistic content created by masters and doctoral students in the degree-seeking process. Some ETDs in this collection are restricted to use by the UNT community.

What responsibilities do I have when using this dissertation?

When

Dates and time periods associated with this dissertation.

Creation Date

  • May 1986

Added to The UNT Digital Library

  • Aug. 22, 2014, 6 p.m.

Description Last Updated

  • April 27, 2016, 12:08 p.m.

Usage Statistics

When was this dissertation last used?

Yesterday: 0
Past 30 days: 0
Total Uses: 16

Interact With This Dissertation

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

Citations, Rights, Re-Use

McClure, Stephen Warren. Linear and Nonlinear Optical Techniques to Characterize Narrow Gap Semicondutors: (Hg /Cd)Te and InSb, dissertation, May 1986; Denton, Texas. (digital.library.unt.edu/ark:/67531/metadc330622/: accessed December 13, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; .