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Patent relating to graphene formation on dielectrics and electronic devices formed therefrom.
Physical Description
12 p. : ill.
Notes
Abstract: Methods of forming a graphene-based device are provided. According to an embodiment, a graphene-based device can be formed by subjecting a substrate having a dielectric formed thereon to a chemical vapor deposition (CVD) process using a cracked hydrocarbon or a physical vapor deposition (PVD) process using a graphite source; and performing an annealing process. The annealing process can be performed to temperatures of 1000 K or more. The cracked hydrocarbon of the CVD process can be cracked ethylene. In accordance with one embodiment, the application of the cracked ethylene to a MgO(111) surface followed by an annealing under ultra high vacuum conditions can result in a structure on the MgO(111) surface of an ordered graphene film with an oxidized carbon-containing interfacial layer therebetween. In another embodiment, the PVD process can be used to form single or multiple monolayers of graphene.
Prior Publication Data: US 2012/0168721 A1, July 5, 2012.
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Kelber, Jeffry A.; Gaddam, Sneha Sen & Bjelkevig, Cameron L.Graphene Formation on Dielectrics and Electronic Devices Formed Therefrom,
patent,
April 1, 2014;
[Washington, D.C.].
(https://digital.library.unt.edu/ark:/67531/metadc307068/:
accessed August 16, 2022),
University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu;
crediting UNT College of Arts and Sciences.