Methods of Forming Graphene/(Multilayer) Boron Nitride for Electronic Device Applications

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Description

Patent relating to methods of forming graphene/(multilayer) boron nitride for electronic device applications.

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7 p. : ill.

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Kelber, Jeffry A. April 17, 2012.

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This patent is part of the collection entitled: UNT Scholarly Works and was provided by UNT College of Arts and Sciences to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 83 times . More information about this patent can be viewed below.

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Description

Patent relating to methods of forming graphene/(multilayer) boron nitride for electronic device applications.

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7 p. : ill.

Notes

Abstract: Disclosed is a substrate-mediated assembly for graphene structures. According to an embodiment, long-range ordered, multilayer BN(111) films can be formed by repeated atomic layer deposition (ALD) of a boron-halide or organoborane precursor and NH3 onto a substrate followed by a high temperature anneal. Graphene can then be formed on an ordered BN(111) film by depositing carbon on the ordered surface of the BN(111) film.

Prior Publication Data: US 2011/0045282 A1, February 24, 2011.

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UNT Scholarly Works

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  • August 18, 2009

Accepted Date

  • April 17, 2012

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  • April 17, 2012

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  • July 7, 2014, 8:20 a.m.

Description Last Updated

  • Dec. 12, 2017, 8:20 p.m.

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Kelber, Jeffry A. Methods of Forming Graphene/(Multilayer) Boron Nitride for Electronic Device Applications, patent, April 17, 2012; [Washington, D.C.]. (digital.library.unt.edu/ark:/67531/metadc306045/: accessed December 15, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT College of Arts and Sciences.