Graphene/(Multilayer) Boron Nitride Heteroepitaxy for Electronic Device Applications

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Description

Patent relating to graphene/(multilayer) boron nitride heteroepitaxy for electronic device applications.

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6 p. : ill.

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Kelber, Jeffry A. December 25, 2012.

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This patent is part of the collection entitled: UNT Scholarly Works and was provided by UNT College of Arts and Sciences to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 132 times. More information about this patent can be viewed below.

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Description

Patent relating to graphene/(multilayer) boron nitride heteroepitaxy for electronic device applications.

Physical Description

6 p. : ill.

Notes

Abstract: Disclosed is a substrate-mediated assembly for graphene structures. According to an embodiment, long-range ordered, multilayer BN(111) films can be formed by atomic layer deposition (ALD) onto a substrate. The subject BN(111) films can then be used to order carbon atoms into a graphene sheet during a carbon deposition process.

Prior Publication Data: US 2012/0015166 A1, January 19, 2012.

Related U.S. Application Data: Division of application number 12/543,053, filed on August 18, 2009, now Patent Number 8,158,200.

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UNT Scholarly Works

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Submitted Date

  • September 23, 2011

Accepted Date

  • December 25, 2012

Creation Date

  • December 25, 2012

Added to The UNT Digital Library

  • July 7, 2014, 8:20 a.m.

Description Last Updated

  • Dec. 12, 2017, 8:19 p.m.

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Kelber, Jeffry A. Graphene/(Multilayer) Boron Nitride Heteroepitaxy for Electronic Device Applications, patent, December 25, 2012; [Washington, D.C.]. (https://digital.library.unt.edu/ark:/67531/metadc306038/: accessed August 24, 2019), University of North Texas Libraries, Digital Library, https://digital.library.unt.edu; crediting UNT College of Arts and Sciences.