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Method of Making Integrated Circuits Using Ruthenium and its Oxides as a Cu Diffusion Barrier

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Description

Patent relating to a method of making integrated circuits using ruthenium and its oxides as a Cu diffusion barrier.

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9 p. : ill.

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Chyan, Oliver M. R. & Ponnuswamy, Thomas July 24, 2007.

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This patent is part of the collection entitled: UNT Scholarly Works and was provided by the UNT College of Arts and Sciences to the UNT Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 382 times. More information about this patent can be viewed below.

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Patent relating to a method of making integrated circuits using ruthenium and its oxides as a Cu diffusion barrier.

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9 p. : ill.

Notes

Abstract: The present invention generally relates to methods used for fabricating integrated circuits (“ICs”), using Ruthenium (“Ru”) and its oxides and/or Iridium (“Ir”) and its oxides as the diffusion barrier to contain and control copper (“Cu”) interconnects. The invention also covers ICs incorporating such materials in the diffusion barrier to contain and control the Cu interconnects. The present invention advantageously provides better integration and fabrication of advanced IC chips with sub-micron features.

Prior Publication Data: US 2004/0051117 A1, March 18, 2004.

Related U.S. Application Data: Provisional application number 60/393,204, filed on July 2, 2002.

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  • June 20, 2003

Accepted Date

  • July 24, 2007

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  • July 24, 2007

Added to The UNT Digital Library

  • June 24, 2014, 1:10 p.m.

Description Last Updated

  • Nov. 3, 2023, 10:58 a.m.

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Chyan, Oliver M. R. & Ponnuswamy, Thomas. Method of Making Integrated Circuits Using Ruthenium and its Oxides as a Cu Diffusion Barrier, patent, July 24, 2007; [Washington, D.C.]. (https://digital.library.unt.edu/ark:/67531/metadc304839/: accessed May 16, 2026), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; crediting UNT College of Arts and Sciences.

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