Linear, Nonlinear Optical and Transport Properties of Quantum Wells Composed of Short Period Strained InAs/GaAs Superlattices

PDF Version Also Available for Download.

Description

In this work, ordered all-binary short-period strained InAs/GaAs superlattice quantum wells were studied as an alternative to strained ternary alloy InGaAs/GaAs quantum wells. InGaAs quantum wells QWs have been of great interest in recent years due to the great potential applications of these materials in future generations of electronic and optoelectronic devices. The all binary structures are expected to have all the advantages of their ternary counterparts, plus several additional benefits related to growth, to the elimination of alloy disorder scattering and to the presence of a higher average indium content.

Physical Description

xii, 133 leaves: ill.

Creation Information

Huang, Xuren December 1993.

Context

This dissertation is part of the collection entitled: UNT Theses and Dissertations and was provided by UNT Libraries to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 30 times . More information about this dissertation can be viewed below.

Who

People and organizations associated with either the creation of this dissertation or its content.

Author

Publisher

Rights Holder

For guidance see Citations, Rights, Re-Use.

  • Huang, Xuren

Provided By

UNT Libraries

The UNT Libraries serve the university and community by providing access to physical and online collections, fostering information literacy, supporting academic research, and much, much more.

Contact Us

What

Descriptive information to help identify this dissertation. Follow the links below to find similar items on the Digital Library.

Degree Information

Description

In this work, ordered all-binary short-period strained InAs/GaAs superlattice quantum wells were studied as an alternative to strained ternary alloy InGaAs/GaAs quantum wells. InGaAs quantum wells QWs have been of great interest in recent years due to the great potential applications of these materials in future generations of electronic and optoelectronic devices. The all binary structures are expected to have all the advantages of their ternary counterparts, plus several additional benefits related to growth, to the elimination of alloy disorder scattering and to the presence of a higher average indium content.

Physical Description

xii, 133 leaves: ill.

Subjects

Language

Identifier

Unique identifying numbers for this dissertation in the Digital Library or other systems.

Collections

This dissertation is part of the following collection of related materials.

UNT Theses and Dissertations

Theses and dissertations represent a wealth of scholarly and artistic content created by masters and doctoral students in the degree-seeking process. Some ETDs in this collection are restricted to use by the UNT community.

What responsibilities do I have when using this dissertation?

When

Dates and time periods associated with this dissertation.

Creation Date

  • December 1993

Added to The UNT Digital Library

  • March 26, 2014, 9:30 a.m.

Description Last Updated

  • Jan. 15, 2015, 1:35 p.m.

Usage Statistics

When was this dissertation last used?

Yesterday: 0
Past 30 days: 0
Total Uses: 30

Interact With This Dissertation

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

International Image Interoperability Framework

IIF Logo

We support the IIIF Presentation API

Huang, Xuren. Linear, Nonlinear Optical and Transport Properties of Quantum Wells Composed of Short Period Strained InAs/GaAs Superlattices, dissertation, December 1993; Denton, Texas. (digital.library.unt.edu/ark:/67531/metadc278855/: accessed December 13, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; .