Hexagon versus Trimer Formation in In Nanowires on Si(111): Energetics and Quantum Conductance

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Article on hexagon versus trimer formation in In nanowires on Si(111).

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4 p.: ill.

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Stekolnikov, A. A.; Seino, Kaori; Bechstedt, Friedhelm; Calzolari, Arrigo & Buongiorno Nardelli, Marco January 12, 2007.

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Article on hexagon versus trimer formation in In nanowires on Si(111).

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4 p.: ill.

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Copyright 2007 American Physical Society. The following article appeared in Physical Review Letters, 98:2, http://link.aps.org/doi/10.1103/PhysRevLett.98.026105

Abstract: The structural and electronic properties of the quasi-one-dimensional In/Si(111) surface system are calculated from first principles. It is found that the symmetry lowering of the In chains is energetically favorable, provided neighboring nanowires are correlated, giving rise to a doubling of the surface unit cell both along and perpendicular to the chain direction. The recently suggested formation of hexagons within the In nanowires -- in clear contrast to the trimer formation proposed earlier --drastically modifies the electron transport along the In chains, in agreement with experiment.

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  • Physical Review Letters, 2007, College Park: American Physical Society

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  • Publication Title: Physical Review Letters
  • Volume: 98
  • Issue: 2
  • Peer Reviewed: Yes

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  • January 12, 2007

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  • Jan. 21, 2014, 10:26 a.m.

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  • April 2, 2014, 2:35 p.m.

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Stekolnikov, A. A.; Seino, Kaori; Bechstedt, Friedhelm; Calzolari, Arrigo & Buongiorno Nardelli, Marco. Hexagon versus Trimer Formation in In Nanowires on Si(111): Energetics and Quantum Conductance, article, January 12, 2007; [College Park, Maryland]. (digital.library.unt.edu/ark:/67531/metadc270794/: accessed April 25, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT College of Arts and Sciences.