Band Engineering and Magnetic Doping of Epitaxial Graphene on SiC (0001)

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Article on band engineering and magnetic doping of epitaxial graphene on SiC (0001).

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4 p.: ill.

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Jayasekera, Thushari; Kong, Byoung Don; Kim, Ki Wook & Buongiorno Nardelli, Marco April 9, 2010.

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Article on band engineering and magnetic doping of epitaxial graphene on SiC (0001).

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4 p.: ill.

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Copyright 2010 American Physical Society. The following article appeared in Physical Review Letters, 104:14, http://link.aps.org/doi/10.1103/PhysRevLett.104.146801

Abstract: Using calculations from first principles we show how specific interface modifications can lead to a fine-tuning of the doping and band alignment in epitaxial graphene on SiC. Upon different choices of dopants, we demonstrate that one can achieve a variation of the valence band offset between the graphene Dirac point and the valence band edge of SiC up to 1.5 eV. Finally, via appropriate magnetic doping one can induce a half-metallic behavior in the first graphene monolayer. These results clearly establish the potential for graphene utilization in innovative electronic and spintronic devices.

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  • Physical Review Letters, 2010, College Park: American Physical Society

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  • Publication Title: Physical Review Letters
  • Volume: 104
  • Issue: 14
  • Peer Reviewed: Yes

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  • April 9, 2010

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  • Jan. 21, 2014, 10:26 a.m.

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  • March 27, 2014, 3:20 p.m.

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Jayasekera, Thushari; Kong, Byoung Don; Kim, Ki Wook & Buongiorno Nardelli, Marco. Band Engineering and Magnetic Doping of Epitaxial Graphene on SiC (0001), article, April 9, 2010; [College Park, Maryland]. (digital.library.unt.edu/ark:/67531/metadc270779/: accessed June 25, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT College of Arts and Sciences.