Strain effects on the interface properties of nitride semiconductors

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Article on the strain effects on the interface properties of nitride semiconductors.

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4 p.

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Buongiorno Nardelli, Marco; Rapcewicz, Krzysztof & Bernholc, Jerry March 15, 1997.

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Article on the strain effects on the interface properties of nitride semiconductors.

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4 p.

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Copyright 1997 American Physical Society. The following article appeared in Physical Review B, 55:12, http://prb.aps.org/abstract/PRB/v55/i12/pR7323_1

Abstract: An ab initio study of nitride-based heteroepitaxial interfaces that uses norm-conserving pseudopotentials and explicitly treats the strain due to lattice mismatch is presented. Strain effects on the band offsets range from 20% to 40% The AIN/GaN/InN interfaces (with AIN in-plane lattice constant) are all of type I, while the Al0.5Ga0.5N/AlN zinc-blende (001) interface is of type II. Further, the bulk polarizations in wurtzite AlN and GaN are -1.2 and -0.45 μC/cm², respectively, and the interface contribution to the polarization in the GaN/AlN wurtzite multiquantum-well is small.

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  • Physical Review B, 1997, College Park: American Chemical Society, pp. 7323-7326

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  • Publication Title: Physical Review B
  • Volume: 55
  • Issue: 12
  • Page Start: 7323
  • Page End: 7326
  • Peer Reviewed: Yes

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  • March 15, 1997

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  • Nov. 8, 2013, 8:29 a.m.

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  • April 1, 2014, 1:34 p.m.

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Buongiorno Nardelli, Marco; Rapcewicz, Krzysztof & Bernholc, Jerry. Strain effects on the interface properties of nitride semiconductors, article, March 15, 1997; [College Park, Maryland]. (digital.library.unt.edu/ark:/67531/metadc228300/: accessed August 19, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT College of Arts and Sciences.