Broad band light emission ranging from the ultraviolet (UV) to the near infrared (NIR) has been observed from silicon nanoparticles fabricated using low energy (30-45 keV) metal and non-metal ion implantation with a fluence of 5*1015 ions/cm2 in crystalline Si(100). It is found from a systematic study of the annealing carried out at certain temperatures that the spectral characteristics remains unchanged except for the enhancement of light emission intensity due to annealing. The annealing results in nucleation of metal nanoclusters in the vicinity of Si nanoparticles which enhances the emission intensity. Structural and optical characterization demonstrate that the emission originates from both highly localized defect bound excitons at the Si/Sio2 interface, as well as surface and interface traps associated with the increased surface area of the Si nanocrystals. The emission in the UV is due to interband transitions from localized excitonic states at the interface of Si/SiO2 or from the surface of Si nanocrystals. The radiative efficiency of the UV emission from the Si nanoparticles can be modified by the localized surface plasmon (LSP) interaction induced by the nucleation of silver nanoparticles with controlled annealing of the samples. The UV emission from Si nanoclusters are coupled resonantly to the LSP modes. The non-resonant emission can be enhanced by electrostatic-image charge effects. The emission in the UV (~3.3 eV) region can also be significantly enhanced by electrostatic image charge effects induced by Au nanoparticles. The UV emission from Si nanoclusters, in this case, can be coupled without LSP resonance. The recombination of carriers in Si bound excitons is mediated by transverse optical phonons due to the polarization of the surface bound exciton complex. The low energy side of emission spectrum at low temperature is dominated by 1st and 2nd order phonon replicas. Broad band emission ranging from the UV to the NIR wavelength range can be obtained from Ag implanted onto a single silicon substrate.