Structure and Electronic Properties of InSb Nanowires Grown in Flexible Polycarbonate Membranes

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The article explores the various factors that affect nucleation and nanowire growth. A dense array of vertically aligned indium antimonide (InSb) nanowires with high aspect ratio were grown in the pores of a track-etched polycarbonate membrane via a one-step electrochemical method.

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15 p.

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Singh, Abhay; Roccapriore, Kevin M.; Algarni, Zaina; Salloom, Riyadh; Golden, Teresa Diane, 1963- & Philipose, Usha September 5, 2019.

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  • Main Title: Structure and Electronic Properties of InSb Nanowires Grown in Flexible Polycarbonate Membranes
  • Alternate Title: Structure and Electronic Properties of Indium Antimonide Nanowires Grown in Flexible Polycarbonate Membranes

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Description

The article explores the various factors that affect nucleation and nanowire growth. A dense array of vertically aligned indium antimonide (InSb) nanowires with high aspect ratio were grown in the pores of a track-etched polycarbonate membrane via a one-step electrochemical method.

Physical Description

15 p.

Notes

Abstract: A dense array of vertically aligned indium antimonide (InSb) nanowires with high aspect ratio (diameter 150 nm, length 20 μ m) were grown in the pores of a track-etched polycarbonate membrane via a one-step electrochemical method. There are several reports on InSb nanowire growth in the pores of a mechanically rigid, nano-channel alumina template (NCA), where nanowire growth occurs in the pores of the NCA. This work on InSb nanowire growth in pores of track-etched polycarbonate (PC) membrane sheds light on the various factors that affect nucleation and nanowire growth. The average length and diameter of the as-grown nanowires was about 10 μ m and 150 nm, respectively. Two possible mechanisms accounting for two different morphologies of the as-grown nanowires are proposed. The polycrystallinity observed in some of the nanowires is explained using the 3D ‘nucleation-coalescence’ mechanism. On the other hand, single crystal nanowires with a high density of twin defects and stacking faults grow epitaxially by a two-dimensional (2D) nucleation/growth mechanism. To assess the electrical quality of the nanowires, two- and four-terminal devices were fabricated using a single InSb nanowire contacted by two Ni electrodes. It was found that, at low bias, the ohmic current is controlled by charge diffusion from the bulk contacts. On the other hand, at high bias, the effects of space charge limited current (SCLC) are evident in the current–voltage behavior, characteristic of transport through structures with reduced electrostatic screening. A cross-over from ohmic to SCLC occurs at about 0.14 V, yielding a free carrier concentration of the order of 1014 cm −3.

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  • Nanomaterials, 9(9), Multidisciplinary Digital Publishing Institute, September 2019

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  • Publication Title: Nanomaterials
  • Volume: 9
  • Issue: 9
  • Peer Reviewed: Yes

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  • September 5, 2019

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  • May 11, 2020, 3:41 p.m.

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  • May 26, 2020, 3:15 p.m.

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Singh, Abhay; Roccapriore, Kevin M.; Algarni, Zaina; Salloom, Riyadh; Golden, Teresa Diane, 1963- & Philipose, Usha. Structure and Electronic Properties of InSb Nanowires Grown in Flexible Polycarbonate Membranes, article, September 5, 2019; [Basel, Switzerland]. (https://digital.library.unt.edu/ark:/67531/metadc1638275/: accessed July 15, 2020), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; crediting UNT College of Arts and Sciences.