Deep Submicron Extended-Gate Field-Effect (EGFET) Based on Transistor Association Technique for Chemical Sensing

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This article investigates the design and characterization of a transistor association (TA)-based extended-gate field-effect transistor (EGFET). Prototypes were manufactured using a 130 nm standard complementary metal-oxide semiconductor (CMOS) process and compared with devices presented in recent literature.

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13 p.

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Pullano, Salvatore Andrea; Tasneem, Nishat Tarannum; Mahbub, Ifana; Shamsir, Samira; Greco, Marta; Islam, Syed Kamrul et al. March 2, 2019.

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This article investigates the design and characterization of a transistor association (TA)-based extended-gate field-effect transistor (EGFET). Prototypes were manufactured using a 130 nm standard complementary metal-oxide semiconductor (CMOS) process and compared with devices presented in recent literature.

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13 p.

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Abstract: Extended-gate field-effect transistor (EGFET) is an electronic interface originally developed as a substitute for an ion-sensitive field-effect transistor (ISFET). Although the literature shows that commercial off-the-shelf components are widely used for biosensor fabrication, studies on electronic interfaces are still scarce (e.g., noise processes, scaling). Therefore, the incorporation of a custom EGFET can lead to biosensors with optimized performance. In this paper, the design and characterization of a transistor association (TA)-based EGFET was investigated. Prototypes were manufactured using a 130 nm standard complementary metal-oxide semiconductor (CMOS) process and compared with devices presented in recent literature. A DC equivalence with the counterpart involving a single equivalent transistor was observed. Experimental results showed a power consumption of 24.99 mW at 1.2 V supply voltage with a minimum die area of 0.685 × 1.2 mm2. The higher aspect ratio devices required a proportionally increased die area and power consumption. Conversely, the input-referred noise showed an opposite trend with a minimum of 176.4 nVrms over the 0.1 to 10 Hz frequency band for a higher aspect ratio. EGFET as a pH sensor presented further validation of the design with an average voltage sensitivity of 50.3 mV/pH, a maximum current sensitivity of 15.71 mA1/2/pH, a linearity higher than 99.9%, and the possibility of operating at a lower noise level with a compact design and a low complexity.

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  • Sensors, 19(5), Multidisciplinary Digital Publishing Institute, March 2019

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  • Publication Title: Sensors
  • Volume: 19
  • Issue: 5
  • Peer Reviewed: Yes

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  • March 2, 2019

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  • March 3, 2020, 10:24 p.m.

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  • Nov. 9, 2023, 12:23 p.m.

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Pullano, Salvatore Andrea; Tasneem, Nishat Tarannum; Mahbub, Ifana; Shamsir, Samira; Greco, Marta; Islam, Syed Kamrul et al. Deep Submicron Extended-Gate Field-Effect (EGFET) Based on Transistor Association Technique for Chemical Sensing, article, March 2, 2019; [Basel, Switzerland]. (https://digital.library.unt.edu/ark:/67531/metadc1616568/: accessed April 19, 2025), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; crediting UNT College of Engineering.

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