Deep Submicron Extended-Gate Field-Effect (EGFET) Based on Transistor Association Technique for Chemical Sensing

PDF Version Also Available for Download.

Description

This article investigates the design and characterization of a transistor association (TA)-based extended-gate field-effect transistor (EGFET). Prototypes were manufactured using a 130 nm standard complementary metal-oxide semiconductor (CMOS) process and compared with devices presented in recent literature.

Physical Description

13 p.

Creation Information

Pullano, Salvatore Andrea; Tasneem, Nishat Tarannum; Mahbub, Ifana; Shamsir, Samira; Greco, Marta; Islam, Syed Kamrul et al. March 2, 2019.

Context

This article is part of the collection entitled: UNT Scholarly Works and was provided by the UNT College of Engineering to the UNT Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 110 times. More information about this article can be viewed below.

Who

People and organizations associated with either the creation of this article or its content.

Authors

Unknown Creator Role

Authors

Publisher

Provided By

UNT College of Engineering

The UNT College of Engineering strives to educate and train engineers and technologists who have the vision to recognize and solve the problems of society. The college comprises six degree-granting departments of instruction and research.

Contact Us

What

Descriptive information to help identify this article. Follow the links below to find similar items on the Digital Library.

Degree Information

Description

This article investigates the design and characterization of a transistor association (TA)-based extended-gate field-effect transistor (EGFET). Prototypes were manufactured using a 130 nm standard complementary metal-oxide semiconductor (CMOS) process and compared with devices presented in recent literature.

Physical Description

13 p.

Notes

Abstract: Extended-gate field-effect transistor (EGFET) is an electronic interface originally developed as a substitute for an ion-sensitive field-effect transistor (ISFET). Although the literature shows that commercial off-the-shelf components are widely used for biosensor fabrication, studies on electronic interfaces are still scarce (e.g., noise processes, scaling). Therefore, the incorporation of a custom EGFET can lead to biosensors with optimized performance. In this paper, the design and characterization of a transistor association (TA)-based EGFET was investigated. Prototypes were manufactured using a 130 nm standard complementary metal-oxide semiconductor (CMOS) process and compared with devices presented in recent literature. A DC equivalence with the counterpart involving a single equivalent transistor was observed. Experimental results showed a power consumption of 24.99 mW at 1.2 V supply voltage with a minimum die area of 0.685 × 1.2 mm2. The higher aspect ratio devices required a proportionally increased die area and power consumption. Conversely, the input-referred noise showed an opposite trend with a minimum of 176.4 nVrms over the 0.1 to 10 Hz frequency band for a higher aspect ratio. EGFET as a pH sensor presented further validation of the design with an average voltage sensitivity of 50.3 mV/pH, a maximum current sensitivity of 15.71 mA1/2/pH, a linearity higher than 99.9%, and the possibility of operating at a lower noise level with a compact design and a low complexity.

Source

  • Sensors, 19(5), Multidisciplinary Digital Publishing Institute, March 2019

Language

Item Type

Identifier

Unique identifying numbers for this article in the Digital Library or other systems.

Publication Information

  • Publication Title: Sensors
  • Volume: 19
  • Issue: 5
  • Peer Reviewed: Yes

Collections

This article is part of the following collection of related materials.

UNT Scholarly Works

Materials from the UNT community's research, creative, and scholarly activities and UNT's Open Access Repository. Access to some items in this collection may be restricted.

What responsibilities do I have when using this article?

When

Dates and time periods associated with this article.

Creation Date

  • March 2, 2019

Added to The UNT Digital Library

  • March 3, 2020, 10:24 p.m.

Description Last Updated

  • Nov. 9, 2023, 12:23 p.m.

Usage Statistics

When was this article last used?

Yesterday: 0
Past 30 days: 0
Total Uses: 110

Interact With This Article

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

International Image Interoperability Framework

IIF Logo

We support the IIIF Presentation API

Pullano, Salvatore Andrea; Tasneem, Nishat Tarannum; Mahbub, Ifana; Shamsir, Samira; Greco, Marta; Islam, Syed Kamrul et al. Deep Submicron Extended-Gate Field-Effect (EGFET) Based on Transistor Association Technique for Chemical Sensing, article, March 2, 2019; [Basel, Switzerland]. (https://digital.library.unt.edu/ark:/67531/metadc1616568/: accessed February 28, 2024), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; crediting UNT College of Engineering.

Back to Top of Screen