High Sensitivity Measurement of Implanted as in the Presence of Ge in Ge(x)Si(1-x)/Si Layered Alloys Using Trace Element Accelerator Mass Spectrometry

PDF Version Also Available for Download.

Description

This article discusses high sensitivity measurement of implanted As in the presence of Ge in Ge(x)Si(1-x)/Si layered alloys using trace element accelerator mass spectrometry.

Physical Description

3 p.

Creation Information

Datar, Sameer A.; Wu, Liying; Guo, Baonian N.; Nigam, Mohit; Necsoiu, Daniela; Zhai, Y. J. et al. December 11, 2000.

Context

This article is part of the collection entitled: UNT Scholarly Works and was provided by UNT College of Arts and Sciences to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 46 times . More information about this article can be viewed below.

Who

People and organizations associated with either the creation of this article or its content.

Authors

Publisher

Provided By

UNT College of Arts and Sciences

The UNT College of Arts and Sciences educates students in traditional liberal arts, performing arts, sciences, professional, and technical academic programs. In addition to its departments, the college includes academic centers, institutes, programs, and offices providing diverse courses of study.

Contact Us

What

Descriptive information to help identify this article. Follow the links below to find similar items on the Digital Library.

Degree Information

Description

This article discusses high sensitivity measurement of implanted As in the presence of Ge in Ge(x)Si(1-x)/Si layered alloys using trace element accelerator mass spectrometry.

Physical Description

3 p.

Notes

Copyright 2000 American Institute of Physics. Applied Physics Letters 77(24). http://dx.doi.org/10.1063/1.1331093

Abstract: Various devices can be realized on strained GeSi/Si substrates by doping the substrate with different impurities such as As. As is an n-type dopant in both Ge and Si. As cross contamination can also arise during germanium preamorphization implantation due to inadequate mass resolution in the implanter. Thus, it is important to be able to accurately measure low-level As concentrations in the presence of Ge. Secondary ion mass spectrometry (SIMS) is the standard technique for these types of measurements but is constrained by mass interferences from molecular ions (⁷⁴GeH, ²⁹Si³⁰Si¹⁶O). The trace element accelerator mass accelerator technique allows the breakup of interfering molecules. As is measured in a GeSi matrix with sensitivity significantly better than SIMS.

Source

  • Applied Physics Letters, 2000, College Park: American Institute of Physics, pp. 3974-3976

Language

Item Type

Identifier

Unique identifying numbers for this article in the Digital Library or other systems.

Publication Information

  • Publication Title: Applied Physics Letters
  • Volume: 77
  • Issue: 24
  • Page Start: 3974
  • Page End: 3976
  • Peer Reviewed: Yes

Collections

This article is part of the following collection of related materials.

UNT Scholarly Works

Materials from the UNT community's research, creative, and scholarly activities and UNT's Open Access Repository. Access to some items in this collection may be restricted.

What responsibilities do I have when using this article?

When

Dates and time periods associated with this article.

Creation Date

  • December 11, 2000

Added to The UNT Digital Library

  • Feb. 28, 2013, 7:56 p.m.

Description Last Updated

  • May 6, 2016, 6:19 p.m.

Usage Statistics

When was this article last used?

Yesterday: 0
Past 30 days: 0
Total Uses: 46

Interact With This Article

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

Citations, Rights, Re-Use

Datar, Sameer A.; Wu, Liying; Guo, Baonian N.; Nigam, Mohit; Necsoiu, Daniela; Zhai, Y. J. et al. High Sensitivity Measurement of Implanted as in the Presence of Ge in Ge(x)Si(1-x)/Si Layered Alloys Using Trace Element Accelerator Mass Spectrometry, article, December 11, 2000; [College Park, Maryland]. (digital.library.unt.edu/ark:/67531/metadc146576/: accessed October 21, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT College of Arts and Sciences.