Synthesis of Semiconductor Materials by Radiation Induced Reactions

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Description

""Progress is reported on: design of a continuous flow system for the irradiation of silane using a Cos5 source; pile irradiation of silane samples at elevated temperatures; investigation of materials other than silane, including nonsilicon compounds as well as those containing the silyl group; modification of the existing vacuum system for handling larger quantities of silane as well as increasing the accuracy of the pressure measurements; and use of an electric discharge for the decomposition of silane. Studies were continued on the radiation- and thermalinduced decomposition of sikane at 325 and 350 deg C. A preliminary value of G= 33 … continued below

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19 pages : tables

Creation Information

{{{name}}} & Goldman, Richard October 31, 1961.

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Titles

  • Main Title: Synthesis of Semiconductor Materials by Radiation Induced Reactions
  • Added Title: Quarterly Status Report No.7, November 1, 1960 - January 31, 1961
  • Series Title: NYO (Series) (New York)
  • Series Title: Atomic Energy Commission Reports
  • Added Title: Atomic Energy Commission Report NYO-9515

Description

""Progress is reported on: design of a continuous flow system for the irradiation of silane using a Cos5 source; pile irradiation of silane samples at elevated temperatures; investigation of materials other than silane, including nonsilicon compounds as well as those containing the silyl group; modification of the existing vacuum system for handling larger quantities of silane as well as increasing the accuracy of the pressure measurements; and use of an electric discharge for the decomposition of silane. Studies were continued on the radiation- and thermalinduced decomposition of sikane at 325 and 350 deg C. A preliminary value of G= 33 was obtained for silane."

Physical Description

19 pages : tables

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Digitized from microopaque cards (1).

Contract AT(30-1)-2392.

Includes bibliographical references.

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  • OCLC: #
  • SuDoc Number: Y 3.At 7:22/NYO-9515
  • Report No.: NYO-9515
  • Accession or Local Control No: metadc1463631
  • Archival Resource Key: ark:/67531/metadc1463631

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Imaged from microcard, these technical reports describe research performed for U.S. government agencies from the 1930s to the 1960s. The reports were provided by the Technical Report Archive and Image Library (TRAIL).

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  • October 31, 1961

Added to The UNT Digital Library

  • Sept. 2, 2021, 4:32 p.m.

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  • Oct. 12, 2023, 2:45 p.m.

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{{{name}}} & Goldman, Richard. Synthesis of Semiconductor Materials by Radiation Induced Reactions, report, October 31, 1961; Washington D.C.. (https://digital.library.unt.edu/ark:/67531/metadc1463631/: accessed February 25, 2024), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.

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