Synthesis of Semiconductor Materials by Radiation Induced Reactions

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Description

""Progress is reported on: design of a continuous flow system for the irradiation of silane using a Cos5 source; pile irradiation of silane samples at elevated temperatures; investigation of materials other than silane, including nonsilicon compounds as well as those containing the silyl group; modification of the existing vacuum system for handling larger quantities of silane as well as increasing the accuracy of the pressure measurements; and use of an electric discharge for the decomposition of silane. Studies were continued on the radiation- and thermalinduced decomposition of sikane at 325 and 350 deg C. A preliminary value of G= 33 … continued below

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19 pages : tables

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{{{name}}} & Goldman, Richard October 31, 1961.

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  • Main Title: Synthesis of Semiconductor Materials by Radiation Induced Reactions
  • Added Title: Quarterly Status Report No.7, November 1, 1960 - January 31, 1961
  • Series Title: NYO (Series) (New York)
  • Series Title: Atomic Energy Commission Reports
  • Added Title: Atomic Energy Commission Report NYO-9515

Description

""Progress is reported on: design of a continuous flow system for the irradiation of silane using a Cos5 source; pile irradiation of silane samples at elevated temperatures; investigation of materials other than silane, including nonsilicon compounds as well as those containing the silyl group; modification of the existing vacuum system for handling larger quantities of silane as well as increasing the accuracy of the pressure measurements; and use of an electric discharge for the decomposition of silane. Studies were continued on the radiation- and thermalinduced decomposition of sikane at 325 and 350 deg C. A preliminary value of G= 33 was obtained for silane."

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19 pages : tables

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Digitized from microopaque cards (1).

Contract AT(30-1)-2392.

Includes bibliographical references.

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  • OCLC: #
  • SuDoc Number: Y 3.At 7:22/NYO-9515
  • Report No.: NYO-9515
  • Accession or Local Control No: metadc1463631
  • Archival Resource Key: ark:/67531/metadc1463631

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  • October 31, 1961

Added to The UNT Digital Library

  • Sept. 2, 2021, 4:32 p.m.

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  • Oct. 12, 2023, 2:45 p.m.

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{{{name}}} & Goldman, Richard. Synthesis of Semiconductor Materials by Radiation Induced Reactions, report, October 31, 1961; Washington D.C.. (https://digital.library.unt.edu/ark:/67531/metadc1463631/: accessed January 22, 2025), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.

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