This report describes advances made during Phase II (November 10, 1992-November 9, 1993) of a three-phase, cost-shared subcontract whose ultimate goal is the demonstration of thin film CuInSe{sub 2} photovoltaic modules prepared by methods adaptable to safe, high yield, high volume manufacturing. At the end of Phase I, EPV became one of the first groups to clear the 10% efficiency barrier for CIS cells prepared by non-H{sub 2}Se selenization. During Phase II a total area efficiency of 12.5% was achieved for a 1 cm{sup 2} cell. The key achievement of Phase II was the production of square foot CIS modules …
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National Renewable Energy Lab., Golden, CO (United States)
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Golden, Colorado
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This report describes advances made during Phase II (November 10, 1992-November 9, 1993) of a three-phase, cost-shared subcontract whose ultimate goal is the demonstration of thin film CuInSe{sub 2} photovoltaic modules prepared by methods adaptable to safe, high yield, high volume manufacturing. At the end of Phase I, EPV became one of the first groups to clear the 10% efficiency barrier for CIS cells prepared by non-H{sub 2}Se selenization. During Phase II a total area efficiency of 12.5% was achieved for a 1 cm{sup 2} cell. The key achievement of Phase II was the production of square foot CIS modules without the use of H{sub 2}Se. This is seen as a crucial step towards the commercialization of CIS. Using a novel interconnect technology, EPV delivered an 8.0% aperture area efficiency mini-module and a 6.2% aperture area efficiency 720 cm{sub 2} module to NREL. On the processing side, advances were made in precursor formation and the selenization profile, both of which contributed to higher quality CIS. The higher band gap quaternary chalcopyrite material CuIn(S{sub x}, Se{sub 1{minus}X}){sub 2} was prepared and 8% cells were fabricated using this material. Device analysis revealed a correlation between long wavelength quantum efficiency and the CIS Cu/In ratio. Temperature dependent studies highlighted the need for high V{sub OC} devices to minimize the impact of the voltage drop at operating temperature. Numerical modeling of module performance was performed in order to identify the correct ZnO sheet resistance for modules. Efforts in Phase III will focus on increase of module efficiency to 9-10%, initiation of an outdoor testing program, preparation of completely uniform CIS plates using second generation selenization equipment, and exploration of alternative precursors for CIS formation.
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Delahoy, A. E.; Britt, J.; Faras, F. & Kiss, Z.Non-H{sub 2}Se, ultra-thin CuInSe{sub 2} devices. Annual subcontract report, November 10, 1992--November 9, 1993,
report,
September 1, 1994;
Golden, Colorado.
(https://digital.library.unt.edu/ark:/67531/metadc1395937/:
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