Thermal annealing behavior of an oxide layer under silicon

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This article discusses the thermal annealing behavior of an oxide layer under silicon.

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3 p.

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Hamdi, A. H.; McDaniel, Floyd Del. (Floyd Delbert), 1942-; Pinizzotto, Russell F.; Matteson, Samuel E.; Lam, H. W. & Malhi, S. D. S. December 15, 1982.

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This article discusses the thermal annealing behavior of an oxide layer under silicon.

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3 p.

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Copyright 1982 American Institute of Physics. Appl. Phys. Lett. 41(12), 15 December 1982. http://dx.doi.org/10.1063/1.93413

Abstract: High resolution Rutherford backscattering spectrometry and ion channeling have been employed to evaluate the crystallinity of the surface silicon layer in oxygen implanted silicon. The quality of the top surface layer was determined by measuring the minimum yields along 〈110〉 directions in channeling spectra. Single crystal (100) silicon was implanted with 300 keV O2+ to a dose of 1.06 X 10(18) O2+/cm2. Measurements of residual damage of the top layer were made after annealing the samples at 1150 ˚C for times ranging from 10 to 240 min in either Ar or N2. Under the implantation conditions used in this experiment, a uniform oxide layer 0.52 μm thick was buried under a top silicon layer 0.17 μm thick. The buried oxide layer has abrupt silicon to oxide interfaces. The highest quality silicon surface layer was produced after 3-h annealing in an Ar ambient. A lesser quality silicon surface layer was produced by annealing for shorter times or for equivalent times in N2 ambient.

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  • Applied Physics Letters, 1982, College Park: American Institute of Physics, pp. 1143-1145

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  • Publication Title: Applied Physics Letters
  • Volume: 41
  • Issue: 12
  • Page Start: 1143
  • Page End: 1145
  • Peer Reviewed: Yes

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The Scholarly Works Collection is home to materials from the University of North Texas community's research, creative, and scholarly activities and serves as UNT's Open Access Repository. It brings together articles, papers, artwork, music, research data, reports, presentations, and other scholarly and creative products representing the expertise in our university community. Access to some items in this collection may be restricted.

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  • December 15, 1982

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  • Feb. 1, 2013, 9:58 a.m.

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  • April 1, 2014, 1:01 p.m.

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Hamdi, A. H.; McDaniel, Floyd Del. (Floyd Delbert), 1942-; Pinizzotto, Russell F.; Matteson, Samuel E.; Lam, H. W. & Malhi, S. D. S. Thermal annealing behavior of an oxide layer under silicon, article, December 15, 1982; [College Park, Maryland]. (digital.library.unt.edu/ark:/67531/metadc139474/: accessed May 25, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT College of Arts and Sciences.