Rapid isothermal annealing of As-, P-, and B-implanted silicon Metadata

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Title

  • Main Title Rapid isothermal annealing of As-, P-, and B-implanted silicon

Creator

  • Author: Wilson, Scott R.
    Creator Type: Personal
    Creator Info: Semiconductor Research and Development Laboratories, Motorola
  • Author: Paulson, W. M.
    Creator Type: Personal
    Creator Info: Semiconductor Research and Development Laboratories, Motorola
  • Author: Gregory, R. B.
    Creator Type: Personal
    Creator Info: Semiconductor Research and Development Laboratories, Motorola
  • Author: Hamdi, A. H.
    Creator Type: Personal
    Creator Info: University of North Texas
  • Author: McDaniel, Floyd Del. (Floyd Delbert), 1942-
    Creator Type: Personal
    Creator Info: University of North Texas

Publisher

  • Name: American Institute of Physics
    Place of Publication: [College Park, Maryland]

Date

  • Creation: 1984-06-15

Language

  • English

Description

  • Content Description: This article discusses rapid idothermal annealing of As-, P-, and B-implanted silicon.
  • Physical Description: 9 p.

Subject

  • Keyword: silicon
  • Keyword: ion implantation
  • Keyword: heating
  • Keyword: infrared radiation
  • Keyword: sims
  • Keyword: rbs
  • Keyword: lattice parameters
  • Keyword: annealing
  • Keyword: arsenic
  • Keyword: diffusion
  • Keyword: electric conductivity
  • Keyword: charged-particle transport

Source

  • Journal: Journal of Applied Physics, 1984, College Park: American Institute of Physics, pp. 4162-4170

Citation

  • Publication Title: Journal of Applied Physics
  • Volume: 55
  • Issue: 12
  • Page Start: 4162
  • Page End: 4170
  • Peer Reviewed: True

Collection

  • Name: UNT Scholarly Works
    Code: UNTSW

Institution

  • Name: UNT College of Arts and Sciences
    Code: UNTCAS

Rights

  • Rights Access: public

Resource Type

  • Article

Format

  • Text

Identifier

  • Archival Resource Key: ark:/67531/metadc139472

Degree

  • Academic Department: Physics
  • Academic Department: Materials Science and Engineering

Note

  • Display Note: Copyright 1984 American Institute of Physics. J. Appl. Phys. 55(12). 15 June 1984. http://dx.doi.org/10.1063/1.333034
  • Display Note: Abstract: Single-crystal silicon wafers have been implanted with As, P, and B to doses of 1x1013–1x1016/cm2 and given a transient anneal using a Varian IA-200 Rapid Isothermal Annealer. The system uses infrared radiation to heat the wafers to temperatures in excess of 1000 °C for times on the order of 10 sec. Sheet resistance and Hall measurements have been used to determine the effect of the anneal on the electrical properties of the wafers. Rutherford backscattering and secondary ion mass spectroscopy have been used to measure lattice damage and dopant profiles before and after annealing. As and P are lost during the anneal unless the wafer is capped. Complete activation can be achieved with very little dopant diffusion. Residual damage is minimal in (100) oriented wafers that had been implanted with As. However, for (111) wafers damage is less in (111) wafers implanted to doses ≤5.0x1015/cm2. The diffusion of As during this transient anneal has been modeled using a concentration enhanced diffusion coefficient and the wafer temperature profile obtained from an optical pyrometer.