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Abstract: Silicon wafers implanted with 75As have been annealed with a Varian IA-200 isothermal annealer. The anneal occurs in vacuum using radiation from a resistively heated sheet of graphite. The anneal quality depends on the graphite heater temperature and exposure time. If the anneal time is too short implantation damage remains and if the time is too long measurable losses of As occur causing the sheet resistance to increase. The loss of As can be prevented by depositing 0.05 μm of SiO2 on the wafer before annealing.
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Wilson, Scott R.; Gregory, R. B.; Paulson, W. M.; Hamdi, A. H. & McDaniel, Floyd Del. (Floyd Delbert), 1942-.Rapid isothermal anneal of 75As implanted silicon,
article,
September 1, 1982;
[College Park, Maryland].
(https://digital.library.unt.edu/ark:/67531/metadc139471/:
accessed April 25, 2024),
University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu;
crediting UNT College of Arts and Sciences.
