Rapid isothermal anneal of 75As implanted silicon

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Article discussing a study of the rapid isothermal anneal of 75As implanted silicon.

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3 p.

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Wilson, Scott R.; Gregory, R. B.; Paulson, W. M.; Hamdi, A. H. & McDaniel, Floyd Del. (Floyd Delbert), 1942- November 15, 1982.

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Article discussing a study of the rapid isothermal anneal of 75As implanted silicon.

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3 p.

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Copyright 1982 American Institute of Physics. Applied Physics Letters, 41(10), http://dx.doi.org/10.1063/1.93362

Abstract: Silicon wafers implanted with 75As have been annealed with a Varian IA-200 isothermal annealer. The anneal occurs in vacuum using radiation from a resistively heated sheet of graphite. The anneal quality depends on the graphite heater temperature and exposure time. If the anneal time is too short implantation damage remains and if the time is too long measurable losses of As occur causing the sheet resistance to increase. The loss of As can be prevented by depositing 0.05 μm of SiO2 on the wafer before annealing.

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  • Applied Physics Letters, 1982, College Park: American Institute of Physics, pp. 978-980

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  • Publication Title: Applied Physics Letters
  • Volume: 41
  • Issue: 10
  • Page Start: 978
  • Page End: 980
  • Peer Reviewed: Yes

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  • November 15, 1982

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  • Feb. 1, 2013, 9:58 a.m.

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  • May 16, 2014, 12:27 p.m.

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Wilson, Scott R.; Gregory, R. B.; Paulson, W. M.; Hamdi, A. H. & McDaniel, Floyd Del. (Floyd Delbert), 1942-. Rapid isothermal anneal of 75As implanted silicon, article, November 15, 1982; [College Park, Maryland]. (digital.library.unt.edu/ark:/67531/metadc139471/: accessed December 12, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT College of Arts and Sciences.