Formation and characterization of ion beam assisted nanosystems in silicon

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Article on the formation and characterization of ion beam assisted nanosystems in silicon.

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5 p.

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Poudel, Prakash R.; Rout, Bibhudutta; Hossain, K. M.; Dhoubhadel, Mangal; Kummari, Venkata C.; Neogi, Arup et al. August 2010.

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Article on the formation and characterization of ion beam assisted nanosystems in silicon.

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5 p.

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Copyright 2006 Sociedad Mexicana de Físíca.

Abstract: Even though silicon is optically inactive, the nanoscale particle structures (e.g. SiC) in Si or silica matrices are potential candidates for light emitting solid state device applications with higher operation temperatures. The synthesis of these nanostructures involves ion implantation and subsequent thermal annealing. The film thickness and sizes of the nanostructures can be controlled by ion energy, fluence, and annealing conditions. Particle accelerator based characterization was used at different stages of formation and analysis of these nanosystems in Si. Results will be presented using infrared spectroscopy (IR), X-ray diffraction spectroscopy (XRD), and photoluminescence (PL) spectroscopy.

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  • Revista Mexicana de Físíca, 2010, Coyoacán: Sociedad Mexicana de Físíca, pp. 297-301

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  • Publication Title: Revista Mexicana de Físíca
  • Volume: 56
  • Issue: 4
  • Page Start: 297
  • Page End: 301
  • Peer Reviewed: Yes

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  • August 2010

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  • Feb. 1, 2013, 9:58 a.m.

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  • Feb. 28, 2014, 10:12 a.m.

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Poudel, Prakash R.; Rout, Bibhudutta; Hossain, K. M.; Dhoubhadel, Mangal; Kummari, Venkata C.; Neogi, Arup et al. Formation and characterization of ion beam assisted nanosystems in silicon, article, August 2010; [Coyoacán, México]. (digital.library.unt.edu/ark:/67531/metadc139470/: accessed December 16, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT College of Arts and Sciences.