Semiconductor diode laser having an intracavity spatial phase controller for beam control and switching

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Description

A high-power broad-area semiconductor laser having a intracavity spatial phase controller is disclosed. The integrated intracavity spatial phase controller is easily formed by patterning an electrical contact metallization layer when fabricating the semiconductor laser. This spatial phase controller changes the normally broad far-field emission bean, of such a laser into a single-lobed near-diffraction-limited beam at pulsed output powers of over 400 mW. Two operating modes, a thermal and a gain operating mode, exist for the phase controller, allowing for steering and switching the beam as the modes of operation are switched, and the emission beam may be scanned, for example, ... continued below

Physical Description

29 p.

Creation Information

Hohimer, J. P. December 31, 1992.

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This patent is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this patent can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

A high-power broad-area semiconductor laser having a intracavity spatial phase controller is disclosed. The integrated intracavity spatial phase controller is easily formed by patterning an electrical contact metallization layer when fabricating the semiconductor laser. This spatial phase controller changes the normally broad far-field emission bean, of such a laser into a single-lobed near-diffraction-limited beam at pulsed output powers of over 400 mW. Two operating modes, a thermal and a gain operating mode, exist for the phase controller, allowing for steering and switching the beam as the modes of operation are switched, and the emission beam may be scanned, for example, over a range of 1.4 degrees or switched by 8 degrees. More than one spatial phase controller may be integrated into the laser structure.

Physical Description

29 p.

Notes

OSTI as DE94014899; Paper copy available at OSTI: phone, 865-576-8401, or email, reports@adonis.osti.gov

Source

  • Other Information: PBD: 1992

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  • Other: DE94014899
  • Report No.: PATENTS-US--A7883315
  • Grant Number: AC04-76DP00789
  • Office of Scientific & Technical Information Report Number: 10165557
  • Archival Resource Key: ark:/67531/metadc1389662

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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Creation Date

  • December 31, 1992

Added to The UNT Digital Library

  • Nov. 28, 2018, 2:33 p.m.

Description Last Updated

  • March 11, 2019, 1:27 p.m.

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Hohimer, J. P. Semiconductor diode laser having an intracavity spatial phase controller for beam control and switching, patent, December 31, 1992; Albuquerque, New Mexico. (https://digital.library.unt.edu/ark:/67531/metadc1389662/: accessed September 20, 2019), University of North Texas Libraries, Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.