Near interface oxide degradation in high temperature annealed Si/SiO{sub 2}/Si structures

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Degradation of 430 nm thick SiO{sub 2} layers in Si/SiO{sub 2}/Si structures which results from high temperature annealing (1320 C) has been studied using electron spin resonance, infra-red and refractive index measurements. Large numbers of oxygen vacancies are found in a region {le}100 nm from each Si/SiO{sub 2} interface. Two types of paramagnetic defects are observed following {gamma} or x-irradiation or hole injection. The 1106 cm{sup {minus}1} infra-red absorption associated with O interstitials in the Si substrate is found to increase with annealing time. The infra-red and spin resonance observations can be explained qualitatively and quantitatively in terms of a ... continued below

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7 p.

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Devine, R. A. B.; Mathiot, D.; Warren, W. L. & Fleetwood, D. M. December 31, 1993.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Degradation of 430 nm thick SiO{sub 2} layers in Si/SiO{sub 2}/Si structures which results from high temperature annealing (1320 C) has been studied using electron spin resonance, infra-red and refractive index measurements. Large numbers of oxygen vacancies are found in a region {le}100 nm from each Si/SiO{sub 2} interface. Two types of paramagnetic defects are observed following {gamma} or x-irradiation or hole injection. The 1106 cm{sup {minus}1} infra-red absorption associated with O interstitials in the Si substrate is found to increase with annealing time. The infra-red and spin resonance observations can be explained qualitatively and quantitatively in terms of a model in which oxygen atoms are gettered from the oxide into the under or overlying Si, the driving force being the increased O solubility limit associated with the anneal temperature.

Physical Description

7 p.

Notes

OSTI as DE94014180; Paper copy available at OSTI: phone, 865-576-8401, or email, reports@adonis.osti.gov

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  • Fall meeting of the Materials Research Society (MRS),Boston, MA (United States),29 Nov - 3 Dec 1993

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  • Other: DE94014180
  • Report No.: SAND--94-1429C
  • Report No.: CONF-931108--103
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 10161489
  • Archival Resource Key: ark:/67531/metadc1387501

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  • December 31, 1993

Added to The UNT Digital Library

  • Nov. 28, 2018, 2:33 p.m.

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  • Dec. 10, 2018, 10:18 p.m.

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Devine, R. A. B.; Mathiot, D.; Warren, W. L. & Fleetwood, D. M. Near interface oxide degradation in high temperature annealed Si/SiO{sub 2}/Si structures, article, December 31, 1993; Albuquerque, New Mexico. (https://digital.library.unt.edu/ark:/67531/metadc1387501/: accessed March 25, 2019), University of North Texas Libraries, Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.