Enhanced ionic conduction at the film/substrate interface in LiI thin films grown on sapphire(0001)

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The ionic conductivity of LiI thin films grown on sapphire(0001) substrates has been studied in-situ during deposition as a function of film thickness and deposition conditions. LiI films were produced at room temperature by sublimation in an ultra-high-vacuum system. The conductivity of the LiI parallel to the film/substrate interface was determined from frequency-dependent impedance measurements as a function of film thickness using Au interdigital electrodes deposited on the sapphire surface. The measurements show a conduction of {approximately}5 times the bulk value at the interface which gradually decreases as the film thickness is increased beyond 100 nm. This interfacial enhancement is ... continued below

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7 p.

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Lubben, D. & Modine, F. A. December 1, 1993.

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The ionic conductivity of LiI thin films grown on sapphire(0001) substrates has been studied in-situ during deposition as a function of film thickness and deposition conditions. LiI films were produced at room temperature by sublimation in an ultra-high-vacuum system. The conductivity of the LiI parallel to the film/substrate interface was determined from frequency-dependent impedance measurements as a function of film thickness using Au interdigital electrodes deposited on the sapphire surface. The measurements show a conduction of {approximately}5 times the bulk value at the interface which gradually decreases as the film thickness is increased beyond 100 nm. This interfacial enhancement is not stable but anneals out with a characteristic log of time dependence. Fully annealed films have an activation energy for conduction ({sigma}T) of {approximately}0.47{plus_minus}.03 eV, consistent with bulk measurements. The observed annealing behavior can be fit with a model based on dislocation motion which implies that the increase in conduction near the interface is not due to the formation of a space-charge layer as previously reported but to defects generated during the growth process. This explanation is consistent with the behavior exhibited by CaF{sub 2} films grown under similar conditions.

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7 p.

Notes

OSTI as DE94017884; Paper copy available at OSTI: phone, 865-576-8401, or email, reports@adonis.osti.gov

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  • Fall meeting of the Materials Research Society (MRS),Boston, MA (United States),29 Nov - 3 Dec 1993

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  • Other: DE94017884
  • Report No.: CONF-931108--107
  • Grant Number: AC05-84OR21400
  • Office of Scientific & Technical Information Report Number: 10178777
  • Archival Resource Key: ark:/67531/metadc1341625

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  • December 1, 1993

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  • Nov. 28, 2018, 2:33 p.m.

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  • Dec. 12, 2018, 4:19 p.m.

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Lubben, D. & Modine, F. A. Enhanced ionic conduction at the film/substrate interface in LiI thin films grown on sapphire(0001), article, December 1, 1993; Tennessee. (https://digital.library.unt.edu/ark:/67531/metadc1341625/: accessed March 20, 2019), University of North Texas Libraries, Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.