Phonon engineering in nanostructures: Controlling interfacial thermal resistance in multilayer-graphene/dielectric heterojunctions Metadata

Metadata describes a digital item, providing (if known) such information as creator, publisher, contents, size, relationship to other resources, and more. Metadata may also contain "preservation" components that help us to maintain the integrity of digital files over time.

Title

  • Main Title Phonon engineering in nanostructures: Controlling interfacial thermal resistance in multilayer-graphene/dielectric heterojunctions

Creator

  • Author: Mao, R.
    Creator Type: Personal
    Creator Info: North Carolina State University
  • Author: Kong, Byoung Don
    Creator Type: Personal
    Creator Info: North Carolina State University
  • Author: Kim, Ki Wook
    Creator Type: Personal
    Creator Info: North Carolina State University
  • Author: Jayasekera, Thushari
    Creator Type: Personal
    Creator Info: Southern Illinois University-Carbondale
  • Author: Calzolari, Arrigo
    Creator Type: Personal
    Creator Info: Istituto Nanoscienze
  • Author: Buongiorno Nardelli, Marco
    Creator Type: Personal
    Creator Info: University of North Texas; Oak Ridge National Laboratory

Publisher

  • Name: American Institute of Physics
    Place of Publication: [College Park, Maryland]

Date

  • Creation: 2012-09-13

Language

  • English

Description

  • Content Description: Article discussing phonon engineering in nanostructures and controlling interfacial thermal resistance in multilayer-graphene/dielectric heterojunctions.
  • Physical Description: 4 p.

Subject

  • Keyword: ab initio calculations
  • Keyword: boron compounds
  • Keyword: graphene
  • Keyword: interface structure
  • Keyword: Kapitza resistance
  • Keyword: multilayers
  • Keyword: nanostructured materials
  • Keyword: semiconductor-insulator boundaries
  • Keyword: silicon compounds
  • Keyword: thermal conductivity
  • Keyword: wide band gap semiconductors

Source

  • Journal: Applied Physics Letters, 2012, College Park: American Institute of Physics

Citation

  • Publication Title: Applied Physics Letters
  • Volume: 101
  • Issue: 11
  • Peer Reviewed: True

Collection

  • Name: UNT Scholarly Works
    Code: UNTSW

Institution

  • Name: UNT College of Arts and Sciences
    Code: UNTCAS

Rights

  • Rights Access: public

Resource Type

  • Article

Format

  • Text

Identifier

  • DOI: 10.1063/1.4752437
  • Archival Resource Key: ark:/67531/metadc132984

Degree

  • Academic Department: Physics
  • Academic Department: Chemistry

Note

  • Display Note: Copyright 2012 American Institute of Physics. The following article appeared in Applied Physics Letters, 101, 113111, http://dx.doi.org/10.1063/1.4752437
  • Display Note: Abstract: Using calculations from first principles and the Landauer approach for phonon transport, we study the Kapitza resistance in selected multilayer graphene/dielectric heterojunctions (hexagonal BN and wurtzite SiC) and demonstrate (i) the resistance variability (~50 - 700 x 10(-10) m2K/W) induced by vertical coupling, dimensionality, and atomistic structure of the system and (ii) the ability of understanding the intensity of the thermal transmittance in terms of the phonon distribution at the interface. Our results pave the way to the fundamental understanding of active phonon engineering by microscopic geometry design.