Chemical vapor deposition of metal nitrides, phosphides and arsenides. Final report

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The author recently reported that dialkylamido complexes are promising precursors to nitride thin films. On this basis it was reasoned that transition metal and main group disilazide complexes in which the silicon has dialkylamido substituents are potential precursors to ternary silicon nitride films. Bulky disilazide ligands are known to stabilize main group and transition metal complexes with low coordination numbers. Reaction of dimethylamine with Cl{sub 3}SiN(H)SiMe{sub 3} in hexane solution at 25{degrees}C gave the bulky disilazane [(Me{sub 2}N){sub 3}Si]N(h)SiMe{sub 3} (1) in 73% yield. Reaction of (1) with n-butyl lithium in benzene at 0{degrees}C produced [(Me{sub 2}N){sub 3}Si]N(Li)SiMe{sub 3} in ... continued below

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2 p.

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Hoffman, D. M. March 1, 1994.

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  • Hoffman, D. M. Univ. of Houston, TX (United States). Dept. of Chemistry

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Description

The author recently reported that dialkylamido complexes are promising precursors to nitride thin films. On this basis it was reasoned that transition metal and main group disilazide complexes in which the silicon has dialkylamido substituents are potential precursors to ternary silicon nitride films. Bulky disilazide ligands are known to stabilize main group and transition metal complexes with low coordination numbers. Reaction of dimethylamine with Cl{sub 3}SiN(H)SiMe{sub 3} in hexane solution at 25{degrees}C gave the bulky disilazane [(Me{sub 2}N){sub 3}Si]N(h)SiMe{sub 3} (1) in 73% yield. Reaction of (1) with n-butyl lithium in benzene at 0{degrees}C produced [(Me{sub 2}N){sub 3}Si]N(Li)SiMe{sub 3} in 82% yield. LiN[Si(NMe{sub 2}){sub 3}]{sub 2} was chemically prepared in 92% yield and was converted to the amine with 83% yield. The author examined the use of amido precursors for main group oxide thin films. Sn(NMe{sub 2}){sub 4} and Si(NMe{sub 2}){sub 4} react with oxygen in an atmospheric pressure chemical vapor deposition reactor to give SnO{sub 2} and SiO{sub 2} films, respectively. The films were deposited on quartz, silicon, and glass at substrate temperatures of 250--400 {degrees}C. The results of the characterizations of the films and compounds are presented in this report.

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2 p.

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OSTI as DE94008096; Paper copy available at OSTI: phone, 865-576-8401, or email, reports@adonis.osti.gov

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  • Other Information: PBD: [1994]

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  • Other: DE94008096
  • Report No.: LA-SUB--94-41
  • Grant Number: W-7405-ENG-36
  • DOI: 10.2172/10132455 | External Link
  • Office of Scientific & Technical Information Report Number: 10132455
  • Archival Resource Key: ark:/67531/metadc1316477

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  • March 1, 1994

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  • Nov. 3, 2018, 11:47 a.m.

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  • Jan. 3, 2019, 3:55 p.m.

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Hoffman, D. M. Chemical vapor deposition of metal nitrides, phosphides and arsenides. Final report, report, March 1, 1994; United States. (https://digital.library.unt.edu/ark:/67531/metadc1316477/: accessed May 27, 2019), University of North Texas Libraries, Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.