Uniaxially stressed Ge:Ga and Ge:Be

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The application of a large uniaxial stress to p-type Ge single crystals changes the character of both the valence band and the energy levels associated with the acceptors. Changes include the splitting of the fourfold degeneracy of the valence band top and the reduction of the ionization energy of shallow acceptors. In order to study the effect of uniaxial stress on transport properties of photoexcited holes, a variable temperature photo-Hall effect system was built in which stressed Ge:Ga and Ge:Be could be characterized. Results indicate that stress increases the lifetime and Hall mobility of photoexcited holes. These observations may help ... continued below

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97 p.

Creation Information

Dubon, O. D. Jr. December 1, 1992.

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Description

The application of a large uniaxial stress to p-type Ge single crystals changes the character of both the valence band and the energy levels associated with the acceptors. Changes include the splitting of the fourfold degeneracy of the valence band top and the reduction of the ionization energy of shallow acceptors. In order to study the effect of uniaxial stress on transport properties of photoexcited holes, a variable temperature photo-Hall effect system was built in which stressed Ge:Ga and Ge:Be could be characterized. Results indicate that stress increases the lifetime and Hall mobility of photoexcited holes. These observations may help further the understanding of fundamental physical processes that affect the performance of stressed Ge photoconductors including the capture of holes by shallow acceptors.

Physical Description

97 p.

Notes

OSTI; NTIS; INIS; GPO Dep.

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  • Other Information: TH: Thesis (M.S.)

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  • Other: DE93010426
  • Report No.: LBL--33454
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 10140490
  • Archival Resource Key: ark:/67531/metadc1313846

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • December 1, 1992

Added to The UNT Digital Library

  • Nov. 3, 2018, 11:47 a.m.

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Dubon, O. D. Jr. Uniaxially stressed Ge:Ga and Ge:Be, thesis or dissertation, December 1, 1992; United States. (https://digital.library.unt.edu/ark:/67531/metadc1313846/: accessed March 20, 2019), University of North Texas Libraries, Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.