Plasma enhanced chemical vapor deposition of ZrO{sub 2} thin films

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Amorphous ZrO{sub 2} thin films were deposited in an inductively coupled PECVD system using a Zr {beta}-diketonate, Zr(C{sub 11}H{sub 19}O{sub 2}){sub 4}, as the precursor. The deposits were air annealed at 900C for 5 min to get pure, single phase, oriented, polycrystalline {alpha}-ZrO{sub 2}. Feasibility of using 2 different types of reactors was investigated. The inductively heated horizontal reactor depositions at 600C had a lower deposition rate and the films were non-uniform in thickness with a columnar structure. The resistively heated vertical reactor depositions at 350C had a higher deposition rate and the films were more uniform in thickness with ... continued below

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129 p.

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Saravanan, Kolandaivelu December 9, 1993.

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  • Ames Laboratory
    Publisher Info: Ames Lab., IA (United States)
    Place of Publication: Iowa

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Description

Amorphous ZrO{sub 2} thin films were deposited in an inductively coupled PECVD system using a Zr {beta}-diketonate, Zr(C{sub 11}H{sub 19}O{sub 2}){sub 4}, as the precursor. The deposits were air annealed at 900C for 5 min to get pure, single phase, oriented, polycrystalline {alpha}-ZrO{sub 2}. Feasibility of using 2 different types of reactors was investigated. The inductively heated horizontal reactor depositions at 600C had a lower deposition rate and the films were non-uniform in thickness with a columnar structure. The resistively heated vertical reactor depositions at 350C had a higher deposition rate and the films were more uniform in thickness with a fine grained microstructure. The statistical design was demonstrated as an effective technique to analyze the effect of process conditions on the rate of deposition and relative (h00) orientation. The factorial design was used to quantify the two responses in terms of the process variables and their mutual interactions. The statistical design for rate of deposition was found to correlate with the trends observed in classical design.

Physical Description

129 p.

Notes

OSTI as DE94006031; Paper copy available at OSTI: phone, 865-576-8401, or email, reports@adonis.osti.gov

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  • Other Information: TH: Thesis (M.S.)

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  • Other: DE94006031
  • Report No.: IS-T--1424
  • Grant Number: W-7405-ENG-82
  • Office of Scientific & Technical Information Report Number: 10120497
  • Archival Resource Key: ark:/67531/metadc1280935

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  • December 9, 1993

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  • Oct. 12, 2018, 6:44 a.m.

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  • Nov. 19, 2018, 6:58 p.m.

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Saravanan, Kolandaivelu. Plasma enhanced chemical vapor deposition of ZrO{sub 2} thin films, thesis or dissertation, December 9, 1993; Iowa. (digital.library.unt.edu/ark:/67531/metadc1280935/: accessed January 20, 2019), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.