Synthesis of Amorphous InSb Nanowires and a Study of the Effects of Laser Radiation and Thermal Annealing on Nanowire Crystallinity

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This article presents a strategy to grow amorphous InSb (a-InSb) nanowires (NWs) in a chemical vapor deposition (CVD) system.

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14 p.

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Algarni, Zaina; Singh, Abhay & Philipose, Usha August 9, 2018.

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This article is part of the collection entitled: UNT Scholarly Works and was provided by the UNT College of Science to the UNT Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 92 times. More information about this article can be viewed below.

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This article presents a strategy to grow amorphous InSb (a-InSb) nanowires (NWs) in a chemical vapor deposition (CVD) system.

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14 p.

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Abstract: Although various synthesis and characterization strategies have been employed for the synthesis of crystalline nanowires, there is very little work done on development of low-dimensional amorphous semiconductors. This paper presents a simple strategy to grow amorphous InSb (a-InSb) nanowires (NWs) in a chemical vapor deposition (CVD) system. The NWs were grown on Si substrate coated with indium film and the lack of crystallinity in the as-grown stoichiometric NWs was ascertained by Raman spectroscopy and electron transport measurements. A model proposed to explain the amorphous NW growth mechanism takes into account the fact that NW growth was carried out at the high temperature ramp-up rate of 75° C/min. This high rate is believed to affect the growth kinematics and determine the arrangement of atoms in the growing NW. Raman spectrum of the as-grown sample shows a broad peak around 155 cm−¹, indicative of the presence of high density of homopolar Sb-Sb bonds in the amorphous matrix. It was also found that high intensity laser light induces localized crystallization of the NW, most likely due to radiation-stimulated diffusion of defects in a-InSb. The nonlinear trend of the current-voltage characteristics for individually contacted a-InSb NWs was analyzed to prove that the non-linearity is not induced by Schottky contacts. At high bias fields, space charge limited conduction was the proposed electron transport mechanism. Post-growth annealing of the as-grown a-InSb NWs was found to be very effective in causing the NWs to undergo a phase transition from amorphous to crystalline.

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  • Nanomaterials, 2018. Basel, Switzerland: Multidisciplinary Digital Publishing Institute

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  • Publication Title: Nanomaterials
  • Volume: 8
  • Page Start: 1
  • Page End: 14
  • Peer Reviewed: Yes

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  • August 9, 2018

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  • July 14, 2018

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  • August 7, 2018

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  • Aug. 30, 2018, 9:08 a.m.

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  • Feb. 8, 2021, 2:26 p.m.

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Algarni, Zaina; Singh, Abhay & Philipose, Usha. Synthesis of Amorphous InSb Nanowires and a Study of the Effects of Laser Radiation and Thermal Annealing on Nanowire Crystallinity, article, August 9, 2018; Basel, Switzerland. (https://digital.library.unt.edu/ark:/67531/metadc1234384/: accessed December 4, 2024), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; crediting UNT College of Science.

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