Electronic properties of hydrogen-related complexes in pure semiconductors

PDF Version Also Available for Download.

Description

Hydrogen has been shown to activate the neutral impurities carbon, silicon and oxygen in ultra-pure germanium and form shallow level complexes. The double acceptors beryllium and zinc in silicon and germanium, as well as the triple acceptor copper in germanium, can be partially passivated, leading to single hole acceptors. The study of the electronic level spectrum of the single carrier bound to these centers at low temperatures has provided much information on symmetry and composition. Most centers reveal a symmetry axis along (111) and are static. In some cases hydrogen has been found to tunnel between equivalent real space positions. ... continued below

Physical Description

Pages: (25 p)

Creation Information

Haller, E.E. July 1, 1990.

Context

This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this article can be viewed below.

Who

People and organizations associated with either the creation of this article or its content.

Author

Sponsors

Publisher

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

Contact Us

What

Descriptive information to help identify this article. Follow the links below to find similar items on the Digital Library.

Description

Hydrogen has been shown to activate the neutral impurities carbon, silicon and oxygen in ultra-pure germanium and form shallow level complexes. The double acceptors beryllium and zinc in silicon and germanium, as well as the triple acceptor copper in germanium, can be partially passivated, leading to single hole acceptors. The study of the electronic level spectrum of the single carrier bound to these centers at low temperatures has provided much information on symmetry and composition. Most centers reveal a symmetry axis along (111) and are static. In some cases hydrogen has been found to tunnel between equivalent real space positions. Photothermal Ionization Spectroscopy (PTIS) has been the most important tool for the study of the optical transitions of the hole (electron) in these hydrogen containing complexes. This photoconductivity technique combines high sensitivity with high resolution and permits the study of shallow acceptors or donors present at concentrations as low as 10{sup 8} cm{sup {minus}3}. Even lower limits may be attained under favorable circumstances. 51 refs., 6 figs.

Physical Description

Pages: (25 p)

Notes

NTIS, PC A03/MF A01 - OSTI; GPO Dep.

Source

  • 6. Trieste semiconductor symposium on hydrogen in semiconductors: bulk and surface properties, Trieste (Italy), 27-31 Aug 1990

Language

Item Type

Identifier

Unique identifying numbers for this article in the Digital Library or other systems.

  • Other: DE91004245
  • Report No.: LBL-29192
  • Report No.: CONF-9008170--1
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 6384506
  • Archival Resource Key: ark:/67531/metadc1212580

Collections

This article is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

What responsibilities do I have when using this article?

When

Dates and time periods associated with this article.

Creation Date

  • July 1, 1990

Added to The UNT Digital Library

  • July 5, 2018, 11:11 p.m.

Description Last Updated

  • Oct. 29, 2018, 10:59 p.m.

Usage Statistics

When was this article last used?

Yesterday: 0
Past 30 days: 0
Total Uses: 1

Interact With This Article

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

International Image Interoperability Framework

IIF Logo

We support the IIIF Presentation API

Haller, E.E. Electronic properties of hydrogen-related complexes in pure semiconductors, article, July 1, 1990; Berkeley, California. (https://digital.library.unt.edu/ark:/67531/metadc1212580/: accessed April 20, 2019), University of North Texas Libraries, Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.