Transient and temperature-dependent phenomena in Ge:Be and Ge:Zn far infrared photoconductors

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An experimental study of the transient and temperature-dependent behavior of Ge:Be and Ge:Zn photoconductors has been performed under the low background photon flux conditions (p dot approx. = 10/sup 8/ photons/second) typical of astronomy and astrophysics applications. The responsivity of Ge:Be and Ge:Zn detectors is strongly temperature-dependent in closely compensated material, and the effect of compensation on free carrier lifetime in Ge:Be has been measured using the photo-Hall effect technique. Closely compensated material has been obtained by controlling the concentration of novel hydrogen-related shallow acceptor complexes, A(Be,H) and A(Zn,H), which exist in doped crystals grown under a H/sub 2/ atmosphere. ... continued below

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Pages: 120

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Haegel, Nancy Marie November 1985.

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An experimental study of the transient and temperature-dependent behavior of Ge:Be and Ge:Zn photoconductors has been performed under the low background photon flux conditions (p dot approx. = 10/sup 8/ photons/second) typical of astronomy and astrophysics applications. The responsivity of Ge:Be and Ge:Zn detectors is strongly temperature-dependent in closely compensated material, and the effect of compensation on free carrier lifetime in Ge:Be has been measured using the photo-Hall effect technique. Closely compensated material has been obtained by controlling the concentration of novel hydrogen-related shallow acceptor complexes, A(Be,H) and A(Zn,H), which exist in doped crystals grown under a H/sub 2/ atmosphere. A review of selection criteria for multilevel materials for optimum photoconductor performance is included. 55 refs., 47 figs.

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Pages: 120

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NTIS, PC A06/MF A01; 1.

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  • Other Information: Portions of this document are illegible in microfiche products. Thesis

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  • Other: DE86005191
  • Report No.: LBL-20627
  • Grant Number: AC03-76SF00098
  • DOI: 10.2172/6308564 | External Link
  • Office of Scientific & Technical Information Report Number: 6308564
  • Archival Resource Key: ark:/67531/metadc1210871

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Office of Scientific & Technical Information Technical Reports

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  • November 1985

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  • July 5, 2018, 11:11 p.m.

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  • Oct. 30, 2018, 12:54 p.m.

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Haegel, Nancy Marie. Transient and temperature-dependent phenomena in Ge:Be and Ge:Zn far infrared photoconductors, thesis or dissertation, November 1985; California. (digital.library.unt.edu/ark:/67531/metadc1210871/: accessed November 17, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.