Broad-beam, high current, metal ion implantation facility

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We have developed a high current metal ion implantation facility with which high current beams of virtually all the solid metals of the Periodic Table can be produced. The facility makes use of a metal vapor vacuum arc ion source which is operated in a pulsed mode, with pulse width 0.25 ms and repetition rate up to 100 pps. Beam extraction voltage is up to 100 kV, corresponding to an ion energy of up to several hundred keV because of the ion charge state multiplicity; beam current is up to several Amperes peak and around 10 mA time averaged delivered ... continued below

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Pages: (13 p)

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Brown, I.G.; Dickinson, M.R.; Galvin, J.E.; Godechot, X. & MacGill, R.A. July 1, 1990.

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Description

We have developed a high current metal ion implantation facility with which high current beams of virtually all the solid metals of the Periodic Table can be produced. The facility makes use of a metal vapor vacuum arc ion source which is operated in a pulsed mode, with pulse width 0.25 ms and repetition rate up to 100 pps. Beam extraction voltage is up to 100 kV, corresponding to an ion energy of up to several hundred keV because of the ion charge state multiplicity; beam current is up to several Amperes peak and around 10 mA time averaged delivered onto target. Implantation is done in a broad-beam mode, with a direct line-of-sight from ion source to target. Here we describe the facility and some of the implants that have been carried out using it, including the seeding' of silicon wafers prior to CVD with titanium, palladium or tungsten, the formation of buried iridium silicide layers, and actinide (uranium and thorium) doping of III-V compounds. 16 refs., 6 figs.

Physical Description

Pages: (13 p)

Notes

OSTI; NTIS; INIS; GPO Dep.

Source

  • 8. international conference on ion implantation technology, Guildford (UK), 30 Jul - 3 Aug 1990

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  • Other: DE91009329
  • Report No.: LBL-28685
  • Report No.: CONF-900722--1
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 6391256
  • Archival Resource Key: ark:/67531/metadc1209160

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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  • July 1, 1990

Added to The UNT Digital Library

  • July 5, 2018, 11:11 p.m.

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  • Oct. 30, 2018, 12:57 p.m.

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Brown, I.G.; Dickinson, M.R.; Galvin, J.E.; Godechot, X. & MacGill, R.A. Broad-beam, high current, metal ion implantation facility, article, July 1, 1990; California. (digital.library.unt.edu/ark:/67531/metadc1209160/: accessed November 18, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.