Hydrogen in semiconductors

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After an incubation'' period in the 1970's and early 80's, during which the first hydrogen related centers were discovered and characterized in ultra-pure germanium, a sharp increase of research activity occurred after the discovery of shallow acceptor passivation in crystalline silicon. The aim of this review is to convey an insight into the rich, multifaceted physics and materials science which has emerged from the vast variety of experimental and theoretical studies of hydrogen in semiconductors. In order to arrive at the current understanding of hydrogen related phenomena in a logical way, each chapter will start with a brief review of ... continued below

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Pages: (13 p)

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Haller, E.E. (California Univ., Berkeley, CA (USA) Lawrence Berkeley Lab., CA (USA)) June 1, 1990.

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Description

After an incubation'' period in the 1970's and early 80's, during which the first hydrogen related centers were discovered and characterized in ultra-pure germanium, a sharp increase of research activity occurred after the discovery of shallow acceptor passivation in crystalline silicon. The aim of this review is to convey an insight into the rich, multifaceted physics and materials science which has emerged from the vast variety of experimental and theoretical studies of hydrogen in semiconductors. In order to arrive at the current understanding of hydrogen related phenomena in a logical way, each chapter will start with a brief review of the major experimental and theoretical advances of the past few years. Those who are interested to learn more about this fascinating area of semiconductor research are referred to reviews, to a number of conference proceedings volumes, and to an upcoming book which will contain authoritative chapters on most aspects of hydrogen in crystalline semiconductors. Some of the early art of semiconductor device processing can finally be put on a scientific foundation and new ways of arriving at advanced device structures begin to use what we have learned from the basic studies of hydrogen in semiconductors. 92 refs., 8 figs.

Physical Description

Pages: (13 p)

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OSTI; NTIS; GPO Dep.; OSTI

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  • 20. international Union of Pure and Applied Physics of semiconductors, Thessaloniki (Greece), 6-10 Aug 1990

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  • Other: DE91005292
  • Report No.: LBL-28691
  • Report No.: CONF-900866--1
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 6448147
  • Archival Resource Key: ark:/67531/metadc1207322

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  • June 1, 1990

Added to The UNT Digital Library

  • July 5, 2018, 11:11 p.m.

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  • Oct. 29, 2018, 11:01 p.m.

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Haller, E.E. (California Univ., Berkeley, CA (USA) Lawrence Berkeley Lab., CA (USA)). Hydrogen in semiconductors, article, June 1, 1990; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc1207322/: accessed November 17, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.