Silicon sheet growth development of the large area silicon sheet task of the low cost silicon solar array project. Third quarterly progress report, April 1--June 30, 1978

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The continuous Czochralski (CZ) equipment is to be designed and constructed as one portion of this program. Concurrently, methods and process parameters will be developed for continuous CZ in the second portion of the effort. The goal is to demonstrate the growth of 100 kilograms of single crystal material using only one crucible. The approach is to suitably modify a Hamco CG2000 crystal grower to demonstrate that continuous CZ is feasible by periodic melt replenishment (recharging) of 12-inch (and later 14-inch) diameter crucibles. The program plan for equipment design and construction is on schedule after some delays in the completion ... continued below

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Pages: 30

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Creator: Unknown. January 1, 1978.

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Description

The continuous Czochralski (CZ) equipment is to be designed and constructed as one portion of this program. Concurrently, methods and process parameters will be developed for continuous CZ in the second portion of the effort. The goal is to demonstrate the growth of 100 kilograms of single crystal material using only one crucible. The approach is to suitably modify a Hamco CG2000 crystal grower to demonstrate that continuous CZ is feasible by periodic melt replenishment (recharging) of 12-inch (and later 14-inch) diameter crucibles. The program plan for equipment design and construction is on schedule after some delays in the completion of the polyweight/recharge system, which has now been fully constructed and installed on the crystal grower. The grower was disassembled to make modifications to the chambers to enable the recharge system to be installed. Other equipment modifications, i.e., melt level control via weight, 14-inch hot zone, and a powder/lump recharge system are in process and are expected to be completed on schedule. The process development program is also on schedule. Two recharges (three melts and ingot growth cycles from the same crucible) have been demonstrated. 42.5 kilograms of single crystal material have been pulled from one crucible by melting to total of 48.7 kilograms in three successive melts, for a cumulative pulled yield of 87%. The 10 cm diameter grown crystal material was approximately 80% of zero dislocation structure. A SAMICS/IPEG analysis of two types of continuous CZ growth is presented.

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Pages: 30

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Dep. NTIS, PC A03/MF A01.

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  • Report No.: DOE/JPL/954888-3
  • Grant Number: NAS-7-100-954888
  • DOI: 10.2172/6323082 | External Link
  • Office of Scientific & Technical Information Report Number: 6323082
  • Archival Resource Key: ark:/67531/metadc1206526

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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Creation Date

  • January 1, 1978

Added to The UNT Digital Library

  • July 5, 2018, 11:11 p.m.

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  • Aug. 30, 2018, 12:23 p.m.

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Silicon sheet growth development of the large area silicon sheet task of the low cost silicon solar array project. Third quarterly progress report, April 1--June 30, 1978, report, January 1, 1978; United States. (digital.library.unt.edu/ark:/67531/metadc1206526/: accessed January 15, 2019), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.