Determination of pseudogap state density and carrier mobility in rf sputtered amorphous silicon. Final technical report, July 1, 1979-June 30, 1980

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The first objective is to determine whether field effect could be observed in samples of sputtered hydrogenated amorphous silicon, and, if it could, to compare the pseudogap density of states determined therefrom with estimates made by other methods of investigation. The second is to determine the drift mobility of excess carriers in these materials by time-of-flight, and to interpret its magnitude and temperature dependence in terms of current theories of transport in disordered semiconductors. The field effect has been observed, but the conditions required are such as to imply that deductions of the state density from it may not accurately ... continued below

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Pages: 83

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Paul, William; Anderson, David A. & Weisfield, Richard L. September 1, 1980.

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Description

The first objective is to determine whether field effect could be observed in samples of sputtered hydrogenated amorphous silicon, and, if it could, to compare the pseudogap density of states determined therefrom with estimates made by other methods of investigation. The second is to determine the drift mobility of excess carriers in these materials by time-of-flight, and to interpret its magnitude and temperature dependence in terms of current theories of transport in disordered semiconductors. The field effect has been observed, but the conditions required are such as to imply that deductions of the state density from it may not accurately represent the bulk density of states. In the course of this work a simpler method of reducing field effect data has been developed. The drift mobility has also been measured, but these experiments have not yet assembled sufficient statistics for final conclusions to be drawn from them.

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Pages: 83

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NTIS, PC A05/MF A01.

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  • Report No.: DOE/ET/23037-4
  • Grant Number: AC03-79ET23037
  • DOI: 10.2172/6419168 | External Link
  • Office of Scientific & Technical Information Report Number: 6419168
  • Archival Resource Key: ark:/67531/metadc1206275

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  • September 1, 1980

Added to The UNT Digital Library

  • July 5, 2018, 11:11 p.m.

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  • Aug. 30, 2018, 5:56 p.m.

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Paul, William; Anderson, David A. & Weisfield, Richard L. Determination of pseudogap state density and carrier mobility in rf sputtered amorphous silicon. Final technical report, July 1, 1979-June 30, 1980, report, September 1, 1980; United States. (digital.library.unt.edu/ark:/67531/metadc1206275/: accessed January 19, 2019), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.