The assumptions, approximations, and uncertainty in the 1-MeV equivalent silicon damage methodology are reviewed. A new silicon displacement kerma function, based on ENDF/B-VI cross sections, is presented and its shape is experimentally confirmed. The issue of an associated 1-MeV equivalent reference kerma value is discussed. 19 refs., 4 figs.
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Sandia National Labs., Albuquerque, NM (USA)
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Albuquerque, New Mexico
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The assumptions, approximations, and uncertainty in the 1-MeV equivalent silicon damage methodology are reviewed. A new silicon displacement kerma function, based on ENDF/B-VI cross sections, is presented and its shape is experimentally confirmed. The issue of an associated 1-MeV equivalent reference kerma value is discussed. 19 refs., 4 figs.
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Griffin, P. J.; Kelly, J. G.; Luera, T. F. & Lazo, M. S.An examination of the 1-MeV equivalent silicon damage methodology,
article,
January 1, 1990;
Albuquerque, New Mexico.
(https://digital.library.unt.edu/ark:/67531/metadc1181622/:
accessed April 18, 2024),
University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu;
crediting UNT Libraries Government Documents Department.