Heat exchanger method, ingot casting; fixed abrasive method, multi-wire slicing: Phase II. Silicon sheet growth development for the Large-Area Silicon Sheet Task of the Low-Cost Silicon Solar Array Project. Quarterly progress report No. 2, January 1, 1978--March 31, 1978

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A crack-free silicon ingot has been cast in a graded, semiconductor purity silica crucible. More than 90% single crystallinity has been achieved in 2.5 kg cast ingots. The impurities on the surface of the melt have been reduced with the use of a rapid heat-up cycle and absence of graphite retainers. Solar cells fabricated out of HEM cast material have shown conversion efficiency up to 14% under AM1 Xenon source illumination. Considerable progress has been achieved in casting square cross-section ingots. The growth in the corners has been obtained but the problem area is in fabricating a custom-made graded crucible. ... continued below

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Pages: 52

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Schmid, F & Khattak, C P April 7, 1978.

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Description

A crack-free silicon ingot has been cast in a graded, semiconductor purity silica crucible. More than 90% single crystallinity has been achieved in 2.5 kg cast ingots. The impurities on the surface of the melt have been reduced with the use of a rapid heat-up cycle and absence of graphite retainers. Solar cells fabricated out of HEM cast material have shown conversion efficiency up to 14% under AM1 Xenon source illumination. Considerable progress has been achieved in casting square cross-section ingots. The growth in the corners has been obtained but the problem area is in fabricating a custom-made graded crucible. Kerf loss was reduced to 6.2 mil, 0.155 mm in slicing 4 cm x 4 cm cross-section with 100% yield. The abrasive life of plated impregnated blades was increased by hardening the electroless nickel layer. In an effort to prevent diamond pull-out and thereby improve the abrasive life, the plated layer was increased from 0.3 mil, 7.5 ..mu..m to 0.5 mil, 12.5 ..mu..m. The extra thickness buried the diamonds. A thinner copper sheath for impregnation and a thicker nickel coating to prevent diamond pull-out is expected to improve the abrasive life. Higher feed forces increased the cutting rates but resulted in deeper surface damage.

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Pages: 52

Notes

Dep. NTIS, PC A04/MF A01.

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  • Report No.: DOE/JPL/954373-6
  • Grant Number: NAS-7-100-954373
  • DOI: 10.2172/6772814 | External Link
  • Office of Scientific & Technical Information Report Number: 6772814
  • Archival Resource Key: ark:/67531/metadc1181578

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • April 7, 1978

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  • July 3, 2018, 8:14 a.m.

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Schmid, F & Khattak, C P. Heat exchanger method, ingot casting; fixed abrasive method, multi-wire slicing: Phase II. Silicon sheet growth development for the Large-Area Silicon Sheet Task of the Low-Cost Silicon Solar Array Project. Quarterly progress report No. 2, January 1, 1978--March 31, 1978, report, April 7, 1978; United States. (digital.library.unt.edu/ark:/67531/metadc1181578/: accessed September 25, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.