Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures Metadata

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Title

  • Main Title Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures

Creator

  • Author: Llopis, Antonio
    Creator Type: Personal

Contributor

  • Chair: Neogi, Arup
    Contributor Type: Personal
    Contributor Info: Major Professor
  • Committee Member: Krokhin , Arkadii
    Contributor Type: Personal
  • Committee Member: Choi , Tae-Youl
    Contributor Type: Personal
  • Committee Member: Gryczynski, Zygmunt
    Contributor Type: Personal

Publisher

  • Name: University of North Texas
    Place of Publication: Denton, Texas
    Additional Info: www.unt.edu

Date

  • Creation: 2012-05

Language

  • English

Description

  • Content Description: III-V nitrides have been put to use in a variety of applications including laser diodes for modern DVD devices and for solid-state white lighting. Plasmonics has come to the foreground over the past decade as a means for increasing the internal quantum efficiency (IQE) of devices through resonant interaction with surface plasmons which exist at metal/dielectric interfaces. Increases in emission intensity of an order of magnitude have been previously reported using silver thin-films on InGaN/GaN MQWs. the dependence on resonant interaction between the plasmons and the light emitter limits the applications of plasmonics for light emission. This dissertation presents a new non-resonant mechanism based on electrostatic interaction of carriers with induced image charges in a nearby metallic nanoparticle. Enhancement similar in strength to that of plasmonics is observed, without the restrictions imposed upon resonant interactions. in this work we demonstrate several key features of this new interaction, including intensity-dependent saturation, increase in the radiative recombination lifetime, and strongly inhomogeneous light emission. We also present a model for the interaction based on the aforementioned image charge interactions. Also discussed are results of work done in the course of this research resulting in the development of a novel technique for strain measurement in light-emitting structures. This technique makes use of a spectral fitting model to extract information about electron-phonon interactions in the sample which can then be related to strain using theoretical modeling.

Subject

  • Keyword: Photonics
  • Keyword: photoluminescence
  • Keyword: semiconductor

Collection

  • Name: UNT Theses and Dissertations
    Code: UNTETD

Institution

  • Name: UNT Libraries
    Code: UNT

Rights

  • Rights Access: public
  • Rights Holder: Llopis, Antonio
  • Rights License: copyright
  • Rights Statement: Copyright is held by the author, unless otherwise noted. All rights Reserved.

Resource Type

  • Thesis or Dissertation

Format

  • Text

Identifier

  • Archival Resource Key: ark:/67531/metadc115113

Degree

  • Academic Department: Department of Physics
  • Degree Discipline: Physics
  • Degree Level: Doctoral
  • Degree Name: Doctor of Philosophy
  • Degree Grantor: University of North Texas
  • Degree Publication Type: disse

Note