Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures Page: 77
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I have also measured the energy of the primary emission and the phonon
replicas. As discussed previously, in InGaN the phonon replicas are separated from the
main peak by the energy of one or more LO phonons (ThwLO=92 meV). Since the
distribution of phonons is not Gaussian, the peak of the first and second phonon
replicas are offset from their expected positions by 1/2 and 3/2 kT respectively, where
kT ~26 meV at room temperature. Figure 5.11 shows the energies of the three peaks
measured as meV deviations from the reference emission energy of 2.984 eV. While I
am unsure of the origin of the discrepancy, it is interesting to note that the first phonon
replica energies line up well with the corrected phonon replica energy whereas the
second phonon replica lines up more closely with the uncorrected values.
5.8 Near-field Spectroscopy
It is clear from the simulations that the image charge effect should produce a
O.4 0 1 0. 0
0.2 ,0.4 0.2 0.40.2
0 1.00.8 0 0 1.00.8 0
Figure 5.12 a, Map of the integrated near-field PL intensity in a Ixl micron region of the
Au NP sample. b, Map of the PL intensity of the QWs within the pits in the same region.
Note that the intensity of the regions immediately surrounding the pits at 1 and 2 differ
significantly. The pits at 2 show significant emission in the adjacent region 3, whereas
the pits at 2 show weak emission intensity in the surrounding region 4.
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Llopis, Antonio. Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures, dissertation, May 2012; Denton, Texas. (digital.library.unt.edu/ark:/67531/metadc115113/m1/87/: accessed March 29, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; .